Rodrigo Martins

Silicon oxycarbide microcrystallinc layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity. δd and optical gap, Eop) of silicon oxycarbide microcrystalline layers. © 1994 Materials Research Society.

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

The combination of high transparency and good thermoelectric properties of SnO2 can open new field of applications for the thin film thermoelectric materials. Here we report on SnO2 thin films with transmittance above 90%, resistivity bellow 10-3Ωm and a Power Factor around 10-4 W/m.K2, for a Seebeck of -255μV/K, at room temperature. The effect of film thickness and post-deposition annealing on the thermoelectric properties were analysed. The performances of a single layer thermoelectric device are also presented. © 2015 .

Thin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0% in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0%. The transmittance spectra were found to be in the range of 77 to 89%. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26×10 -3 to 4.08×-1 Ωcm for the increase in OVP from 1.4 to 4.1%, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm. © 2006 Materials Research Society.

The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i- layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.

This work reports the structure and electro-optical characteristics of different metal oxide films obtained by spray pyrolysis on heated glass substrates, aiming their application in optoelectronic devices. The results show that this technique leads to thin films with properties ranging from dielectric to degenerate semiconductors, offering the following advantages: simplicity, low cost, high productivity and the possibility of covering large areas, highly important for large area device applications.

High-quality SrBi2Nb2O9 (SBN) single crystals were grown from a melt using a high-temperature self-flux solution method and Bi2O3 added with B2O3 as a flux. A suitable thermal profile involving slow cooling rates allowed growing large and translucent SBN crystals exhibiting platelet morphology with typical size ∼5 × 5 mm2 and thickness approximately 400 μm. X-ray diffraction revealed a dominant (001)-orientation of the major face of the platelet crystals and edges oriented parallel to the [110] directions. The dielectric properties were evaluated along the ab-plane and in the c-axis direction. The ferro-paraelectric phase transition was observed at TC = 440°C with Curie-Weiss relationship above TC. The anisotropy of dielectric permittivity, i.e., the ratio between permittivity in the ab-plane and along c-axis was about 10 at TC-The obtained results are used to discuss the observed correlations between anisotropy, crystalline orientation, and electrical properties.

Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers (σ ≥ 10-1 (Ω-cm)-1) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C:O:H matrix.

This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

This work deals with the study of the role of the buffer layers thickness on the TCO/p-a-SiC:H/buffer1/buffer2/i(nc-Si/a-Si:H)/n-a- Si:H/Al solar cell I-V and impedance performances. The aim was to improve the p/i interface region, which has a large influence on the solar cell characteristics and stability. In order to match the difference between the p and i layers optical gaps, the buffer layers were deposited using, for each layer, different methane to silane mixtures, aiming to obtain a gradual match of the corresponding optical gaps. The intrinsic layer was deposited at high hydrogen dilution rates at 27.12 MHz in conditions that allowed the incorporation of nanoparticles/nanoclusters. Solar cells with fill factor of 0.63; open circuit voltage of 0.93 Volts; short circuit current density of 16.13 mA/cm2 and an efficiency of 9.4% were produced with buffer layers around 1.3 nm thick. When comparing these solar cells with conventional amorphous silicon solar cells we notice that the quantum efficiency from ultraviolet to green regions is improved up to 13%, in average. Concerning solar cell capacitance, the data show that the best solar cells exhibit the highest capacitance, meaning that the films are compact and dense, in-line with the other electrical characteristics obtained. ©2005 IEEE.

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Here we report the performance of a selective floating gate (V GS) n-type non-volatile memory paper field-effect transistor. The paper dielectric exhibits a spontaneous polarization of about 1 mCm-2 and GIZO and IZO amorphous oxides are used respectively as the channel and the gate layers. The drain and source regions are based in continuous conductive thin films that promote the integration of fibres coated with the active semiconductor. The floating memory transistor writes, reads and erases the stored information with retention times above 14500 h, and is selective (for VGS > 5 ± 0.1 V). That is, to erase stored information a symmetric pulse to the one used to write must be utilized, allowing to store in the same space different information. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1 - xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications. © 1998 Elsevier Science S.A. All rights reserved.

We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1-xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications.

This paper reports on the use of cellulose paper simultaneously as electrolyte, separation of electrodes, and physical support of a rechargeable battery. The deposition on both faces of a paper sheet of metal or metal oxides thin layers with different electrochemical potentials, respectively as anode and cathode, such as Cu and Al, lead to an output voltage of 0.70 V and a current density that varies between 150 nA/cm2 and 0.5 mA/cm2, subject to the paper composition, thickness and the degree of OHx species adsorbed in the paper matrix. The electrical output of the paper battery is independent of the electrodes thickness but strongly depends on the atmospheric relative humidity (RH), with a current density enhancement by more than 3 orders of magnitude when RH changes from 60% to 85%. Besides flexibility, low cost, low material consumption, environmental friendly, the power output of paper batteries can be adapted to the desired voltagecurrent needed, by proper integration. A 3-V prototype was fabricated to control the ON/OFF state of a paper transistor. © 2006 IEEE.

We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow a substantial simplification of the registration of optical signals as well as of the electronic scheme to be used. © 1998 Elsevier Science S.A. All rights reserved.

We have developed new types of functional and smart optical silicon sensors, based on ITO/multichannel insulator/silicon structures, which are able to execute electronic functions such as amplifying the photocurrent (without avalanche multiplication), transforming the input optical signal into a radio frequency output signal and transforming the analogue input optical signal to a digital output form, without external active electronic components. These new functional optical sensors allow as substantial simplification of the registration of optical signals as well as of the electronic scheme to be used.

In this work, we report the optical and compositional properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films produced by plasma-enhanced chemical vapor deposition (PE-CVD), hot wire CVD (HW-CVD) and hot wire plasma-assisted CVD (HWPA-CVD) processes. The optical band gap of a-SiC:H films was controlled from 1.85 to 3.5 eV by varying the percentage of ethylene in the silane gas mixture from 3 to 100%. Adding a rf plasma to the hot wire process the carbon gas source dissociation is implemented leading to an increase in bulk carbon incorporation. This evidence is proved by the enhancement of the peak ascribed to the SiC stretching vibration mode, the reduction of the peak related to the SiH wagging modes, the decrease in the refractive index and the increase of optical band gap. The influence of hydrogen gas dilution on the properties of the films obtained by the different methods is also reported. © 2001 Elsevier Science B.V. All rights reserved.

This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1-x:layer that lead to the best Schottky diode performances. © 2001 Elsevier Science B.V. All rights reserved.

The aim of this work is to present a process able to allow a fast method to clean plasma enhanced chemical vapour deposition (PECVD) systems used to produce amorphous silicon films and their alloys, and a proper device patterning when required. In this work we propose to study CF4/O2 or SF6 as etchant gases at room temperature to perform cleaning and films patterning. The aim is to select the process that leads to a faster cleaning process without formation of residual contaminants or to anisotropic patterning of very thin layers. The influence of some plasma parameters, such as pressure (p), power (P) and flow (f) for the etchant gases used will be also analysed.

The process conditions of growing thin silicon films by plasma enhanced chemical vapour deposition (PECVD) were presented. The plasma impedance was found to monitor the powders in the PECVD systems and good quality silicon films were grown close to the plasma regime where the powders were formed. The silicon films exhibited properties which were interpreted based on a two-phase model where silicon nanostructures were embedded in a disordered network.

This paper deals with the growth process of nanostructured silicon films produced by chemical vapour deposition technique, at or close to the γ-regime where powders are formed. There, besides the set of chemical reactions undertaken by the species decomposed on the growth surface, the importance of the physics of the plasma in managing the powders and on the final film performances will be shown. To identify the plasma region where Si nanoaggregates are formed, we propose the use of a new parameter that translates the energy coupling of the rf power to the species of the gas flow, per pressure range of the process. By doing so we could establish an excellent correlation between this ratio and the plasma parameters such as peak to peak rf voltage and plasma impedance, or with the films defect density and their transport properties. Apart from that, we also show that high compact Si nanoclusters could be grown under moderate ion bombardment. Finally, to allow the growth at high rates of controlled silicon nanostructures, a three cycling process based on hot wire chemical vapour deposition and plasma assisting the hot wire technique will be discussed. © 2002 Elsevier Science Ltd. All rights reserved.

Nanostructured silicon single junction thin film solar cells were deposited on commercial red clay roof tiles with engobe surfaces and earthenware wall tiles with glazed surfaces, with a test area of 24 mm 2. We studied the influence of the type of substrate tile, back contact, buffer layer and SiO x passivation layer on the optoelectronic performance of the solar cells. Despite the fact that typical micrometre-sized defects on the surfaces of the tiles and the porous nature of the ceramic substrates make deposition of homogeneous thin films on them quite challenging, we have been able to achieve a cell efficiency of 5% and a quantum efficiency of 80% on non-fully optimized cells on commercial tiles. The method is industrially employable utilizing pre-existing plasma-enhanced chemical vapour deposition technologies. The cost-effectiveness and industrial feasibility of the technique are discussed. Our study shows that photovoltaic tiles can combine energy generation with architectural aesthetics leading to significant implications for advancement in building integrated photovoltaics. © 2011 The Royal Society of Chemistry.

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (σph), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100 mw/cm2) at room temperature. © 2006.

AMATLAB/SIMULINK software simulation model (structure and component blocks) has been constructed in order to view and analyze the potential of the PSD (Position Sensitive Detector) array concept technology before it is further expanded or developed. This simulation allows changing most of its parameters, such as the number of elements in the PSD array, the direction of vision, the viewing/scanning angle, the object rotation, translation, sample/scan/simulation time, etc. In addition, results show for the first time the possibility of scanning an object in 3D when using an a-Si:H thin film 128 PSD array sensor and hardware/software system. Moreover, this sensor technology is able to perform these scans and render 3D objects at high speeds and high resolutions when using a sheet-of-light laser within a triangulation platform. As shown by the simulation, a substantial enhancement in 3D object profile image quality and realism can be achieved by increasing the number of elements of the PSD array sensor as well as by achieving an optimal position response from the sensor since clearly the definition of the 3D object profile depends on the correct and accurate position response of each detector as well as on the size of the PSD array. © 2015 by the authors; licensee MDPI, Basel, Switzerland.