Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system
- Citation:
- Willeke, G., Martins R. "Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system." Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 1. 1988. 320-323.
Abstract:
Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers (σ ≥ 10-1 (Ω-cm)-1) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C:O:H matrix.
Notes:
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