Selective optical sensors from 0.25 to 1.1 μm based on metal oxide-semiconductor heterojunctions
- Citation:
- Malik, A.a, Sêco Fortunato Martins A. b E. c. "Selective optical sensors from 0.25 to 1.1 μm based on metal oxide-semiconductor heterojunctions." Sensors and Actuators, A: Physical. 68 (1998): 333-337.
Abstract:
We present a set of high-efficiency optical sensors for the spectral range from 0.25 to 1.1 μm based on metal oxide-semiconductor heterostructures using different substrates: GaP, GaSe, AlxGa1 - xAs, GaAs and Si. A set of several transparent conductive metal oxide films such as indium, tin and zinc oxides fabricated by the spray pyrolysis method and its doping procedure has been investigated. The results show that heavily doped indium and tin oxide films are preferable as the active transparent conductive electrode in heterojunction surface-barrier structures. The fabricated sensors exhibit several features such as process simplicity, high quantum efficiency, uniformity of sensitivity over the active area and a high response speed. Such sensors can be used for precision measurements in different scientific and technical applications. © 1998 Elsevier Science S.A. All rights reserved.
Notes:
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