Silicon carbide photodiodes: Schottky and PINIP structures

Silicon carbide photodiodes: Schottky and PINIP structures

Citation:: Cabrita, A., Pereira Brida Lopes Marques Ferreira Fortunato Martins L. D. A. "Silicon carbide photodiodes: Schottky and PINIP structures." Applied Surface Science. 184 (2001): 437-442.

Abstract:

This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Six:C1-x:layer that lead to the best Schottky diode performances. © 2001 Elsevier Science B.V. All rights reserved.

Notes:

cited By 5

Rodrigo Martins

Professor @ Materials Science Department