Silicon etching in CF4/O2 and SF6 atmospheres
- Citation:
- Silva, A., Raniero Ferreira Águas Pereira Fortunato Martins L. E. H. "Silicon etching in CF4/O2 and SF6 atmospheres." Materials Science Forum. 455-456 (2004): 120-123.
Abstract:
The aim of this work is to present a process able to allow a fast method to clean plasma enhanced chemical vapour deposition (PECVD) systems used to produce amorphous silicon films and their alloys, and a proper device patterning when required. In this work we propose to study CF4/O2 or SF6 as etchant gases at room temperature to perform cleaning and films patterning. The aim is to select the process that leads to a faster cleaning process without formation of residual contaminants or to anisotropic patterning of very thin layers. The influence of some plasma parameters, such as pressure (p), power (P) and flow (f) for the etchant gases used will be also analysed.
Notes:
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