Silicon oxycarbide microcrystalline layers produced by spatial separation techniques
- Citation:
- Martins, R.a, Ferreira Fortunato Vieira I. a E. a. "Silicon oxycarbide microcrystalline layers produced by spatial separation techniques." Materials Research Society Symposium Proceedings. Vol. 336. 1994. 55-60.
Abstract:
Silicon oxycarbide microcrystallinc layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity. δd and optical gap, Eop) of silicon oxycarbide microcrystalline layers. © 1994 Materials Research Society.
Notes:
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