Martins, R., Lavareda Soares Fortunato G. F. E. "
Detection limit of large area 1D thin film position sensitive detectors based in a-Si:H P.I.N. diodes."
Materials Research Society Symposium - Proceedings. Vol. 377. 1995. 791-796.
AbstractThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
Martins, Rodrigo, Lavareda Guilherme Fortunato Elvira Soares Fernando Fernandes Luis Ferreira Luis. "
Linear thin-film position-sensitive detector (LTFPSD) for 3D measurements."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2415. 1995. 148-158.
AbstractA linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).
Martins, Rodrigo, Fortunato Elvira. "
Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2397. 1995. 745-756.
AbstractThe aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
Meng, L., Macarico Martins A. R. "
Study of annealed indium tin oxide films prepared by rf reactive magnetron sputtering."
Materials Research Society Symposium - Proceedings. Vol. 388. 1995. 379-384.
AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.