Dark current-voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes
- Citation:
- Martins, R., Fortunato E. "Dark current-voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes." Journal of Applied Physics. 78 (1995): 3481-3487.
Abstract:
The aim of this work is to provide the basis for the interpretation, under steady state and in the low-voltage regime of the dark current-density-voltage (J-V) characteristics of transverse asymmetric amorphous silicon (a-Si:H) p-i-n and n-i-p diodes. The transverse asymmetric a-Si:H diodes present ratios between the metal contact and the underneath doped layer areas larger than five, leading to the inclusion, in the diode equation, of a lateral leakage current, responsible for the high saturation current density and the forward shape of the J-V curves recorded. The leakage current depends on the lateral spatial potential developed with which varies following a power-law dependence. The experimental J-V curves in diodes with the doped layer around the metal contact unetched and etched prove the role and origin of this lateral leakage current and, thus, the proposed model. © 1995 American Institute of Physics.
Notes:
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