Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques
- Citation:
- Martins, Rodrigo, Vieira Manuela Ferreira Isabel Fortunato Elvira Guimaraes L. "Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques." Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 1. 1994. 508-511.
Abstract:
This paper presents results of the role of the oxygen partial pressure (pO2) used on the properties exhibited by doped μc silicon oxycarbide films produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications.
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