Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques
- Citation:
- Martins, R.a, Vieira Ferreira Fortunato M. b I. a. "Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques." Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 13 (1995): 2199-2209.
Abstract:
The aim of this work is to present experimental data concerning the role of the oxygen partial pressure during the production process on the properties (structure, morphology, composition, and transport properties) exhibited by doped microcrystalline silicon oxycarbide films. The films were produced by a two consecutive decomposition and deposition chamber system, where a spatial separation between the plasma and the growth regions is achieved. The films produced by this technique are highly conductive and highly transparent with suitable properties for optoelectronic applications requiring wide band-gap and low-conductivity materials. © 1995, American Vacuum Society. All rights reserved.
Notes:
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