Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "
Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz."
Materials Science Forum. 455-456 (2004): 532-535.
AbstractThis paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.
Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "
Next generation of thin film transistors based on zinc oxide."
Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352.
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Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "
Sputtering preparation of silicon nitride thin films for gate dielectric applications."
Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 69-72.
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Barbosa, J., O. M. N. D. Teodoro, A. M. C. Moutinho, S. Ribeiro, and C. Monteiro. "
{Characterization of TiAl Alloys by Secondary Ion Mass Spectrometry}."
Materials science forum. 455-456 (2004): 653-656.
AbstractTitanium aluminides are arising as a valuable alternative to superalloys in applications where the ratio resistance/density is important. Together with excellent mechanical and corrosion properties at high temperatures, such characteristics are very attractive for applications in the aeronautical, aerospace and automotive industries. However, the current high selling price, due to high costs of production and raw materials and the need of very specific equipment, are limitative factors for further applications. With the end of the cold war, and the decrease of traditional markets of TiAl, the strategy to develop other applications, strongly depends on the decrease of production costs. An alternative to the present production routes might be the use of traditional casting techniques, by induction melting of the alloy in a ceramic crucible and pouring into ceramic moulds, made by the investment casting process. However, due to the high reactivity of Ti alloys, the use of traditional ceramic materials cannot be used, as they lead to oxide formation and oxygen pick up both from the crucible and the moulding materials. In this work, the relative oxygen concentration of Ti-48Al castings was measured by SIMS ó Secondary Ion Mass Spectrometry. This technique provides a direct measurement of the isotopic composition with high sensitivity. The cylindrical samples were specially prepared to allow the analysis of the area close to the border. Oxygen profiles were acquired for samples obtained with different mould materials. The comparison of such profiles with hardness ones gives insight in the role of the oxygen concentration in the properties of the alloy and in the choice of the most suitable materials for TiAl production