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2004
Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz." Materials Science Forum. 455-456 (2004): 532-535. AbstractWebsite

This paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.

Raniero, Leandro, Rodrigo Martins, Hugo Águas, S. Zang, Isabel Ferreira, Lu{\'ıs Pereira, Elvira Fortunato, and L. Boufendi. "Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 532-535. Abstract
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Águas, Hugo, Lu{\'ıs Pereira, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 73-76. Abstract
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Hettmann, T., R. A. Siddiqui, C. Frey, T. Santos-Silva, MJ Romão, and S. Diekmann. "Mutagenesis study on amino acids around the molybdenum centre of the periplasmic nitrate reductase from Ralstonia eutropha." Biochemical and Biophysical Research Communications. 320 (2004): 1211-1219. Abstract
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Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "Next generation of thin film transistors based on zinc oxide." Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352. Abstract
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Pereira, Lu{\'ıs, Hugo Águas, Leandro Raniero, Rui Miguel S. Martins, Elvira Fortunato, and Rodrigo Martins. "Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 112-115. Abstract
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Aguas, H., L. Raniero, L. Pereira, A. S. Viana, E. Fortunato, and R. Martins. "Role of the rf frequency on the structure and composition of polymorphous silicon films." Journal of non-crystalline solids. 338 (2004): 183-187. Abstract
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Silva, A., Leandro Raniero, E. Ferreira, Hugo Águas, Lu{\'ıs Pereira, Elvira Fortunato, and Rodrigo Martins. "Silicon etching in CF4/O2 and SF6 atmospheres." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 120-123. Abstract
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Raniero, L., N. Martins, P. Canhola, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Spectral response of large area amorphous silicon solar cells." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 8.2 (2004). Abstract
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Raniero, L., Martins Canhola Pereira Ferreira Fortunato Martins N. P. S. "Spectral response of large area amorphous silicon solar cells." High Temperature Material Processes. 8 (2004): 293-299. AbstractWebsite

In this work we report the study of spectral response on large area amorphous silicon solar cells (30×40 cm2), deposited through plasma enhanced chemical vapour deposition technique (PECVD) at excitation frequencies of 27.12MHz. To perform this work, the solar cells were split in units of area of 0.126 cm2, which allows determining the device homogeneity over all the entire solar cell. Emphasis of this work is put the role of thickness and optical band gap of p-doped layer on the collection efficiency, spectral response, current density-voltage curves under standard condition and spectroscopy impedance. The results show that high transparent p-doped layer can be deposited at 42mW/cm2, which allows increasing the collection efficiency in 45%, at the blue region. The spectroscopy impedance performed showed to be efficient in analyzing the device shunt resistance, interfaces role on the device performances and the behaviour of the device depletion region, for the range of frequencies analysed.

Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "Sputtering preparation of silicon nitride thin films for gate dielectric applications." Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 69-72. Abstract
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Pereira, Lu{\'ıs, Hugo Águas, Rui Igreja, Rui Miguel S. Martins, N. Nedev, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "Sputtering preparation of silicon nitride thin films for gate dielectric applications." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 69-72. Abstract
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Dias, JM, T. Alves, C. Bonifacio, AS Pereira, J. Trincao, D. Bourgeois, I. Moura, and MJ Romao. "Structural basis for the mechanism of Ca2+ activation of the di-heme cytochrome c peroxidase from Pseudomonas nautica 617." Structure. 12 (2004): 961-973. AbstractWebsite

Cytochrome c peroxidase (CCP) catalyses the reduction of H2O2 to H2O, an important step in the cellular detoxification process. The crystal structure of the di-heme CCP from Pseudomonas nautica 617 was obtained in two different conformations in a redox state with the electron transfer heme reduced. Form IN, obtained at pH 4.0, does not contain Ca2+ and was refined at 2.2 Angstrom resolution. This inactive form presents a closed conformation where the peroxidatic heme adopts a six-ligand coordination, hindering the peroxidatic reaction from taking place. Form OUT is Ca2+ dependent and was crystallized at pH 5.3 and refined at 2.4 Angstrom resolution. This active form shows an open conformation, with release of the distal histidine (His71) ligand, providing peroxide access to the active site. This is the first time that the active and inactive states are reported for a di-heme peroxidase.

Dyke, J. M., G. Levita, A. Morris, J. S. Ogden, A. A. Dias, M. Algarra, J. P. Santos, M. L. Costa, P. Rodrigues, and M. T. Barros. "A Study of the Thermal Decomposition of 2-Azidoacetamide by Ultraviolet Photoelectron Spectroscopy and Matrix-Isolation Infrared Spectroscopy:  Identification of the Imine Intermediate H2NCOCHNH." The Journal of Physical Chemistry A. 108 (2004): 5299-5307. AbstractWebsite

The thermal decomposition of 2-azidoacetamide (N3CH2CONH2) has been studied by matrix-isolation infrared spectroscopy and real-time ultraviolet photoelectron spectroscopy. N2, CH2NH, HNCO, CO, NH3, and HCN are observed as high-temperature decomposition products, while at lower temperatures, the novel imine intermediate H2NCOCHNH is observed in the matrix-isolation IR experiments. The identity of this intermediate is confirmed both by ab initio molecular orbital calculations of its IR spectrum and by the temperature dependence and distribution of products in the photoelectron spectroscopy (PES) and IR studies. Mechanisms are proposed for the formation and decomposition of the intermediate consistent both with the observed results and with estimated activation energies based on pathway calculations.

Rodrigues, G. C., P. Indelicato, J. P. Santos, P. Patté, and F. Parente. "Systematic calculation of total atomic energies of ground state configurations." Atomic Data and Nuclear Data Tables. 86 (2004): 117-233. AbstractWebsite

We present a systematic study of atomic binding energies, in the Dirac–Fock approximation, for the Lithium (3 electrons) to the Dubnium (105 electrons) isoelectronic series. In each series we have considered all atomic numbers from the one corresponding to the neutral atom up to Z=118. We have obtained the ground state configurations for several heavy ions with charge larger than one.

Aelenei, Laura, A. M. Rodrigues, and Daniel Aelenei. "The Ventilation Effect on the Thermal Performance of a Cavity Wall: Numerical and Experimental Analysis." ROOMVENT 2004 - 9th International Conference on Air Distribution in Rooms. 972-07973-2-3. 2004. Abstract
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Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Barbosa, J., O. M. N. D. Teodoro, A. M. C. Moutinho, S. Ribeiro, and C. Monteiro. "{Characterization of TiAl Alloys by Secondary Ion Mass Spectrometry}." Materials science forum. 455-456 (2004): 653-656. Abstract

Titanium aluminides are arising as a valuable alternative to superalloys in applications where the ratio resistance/density is important. Together with excellent mechanical and corrosion properties at high temperatures, such characteristics are very attractive for applications in the aeronautical, aerospace and automotive industries. However, the current high selling price, due to high costs of production and raw materials and the need of very specific equipment, are limitative factors for further applications. With the end of the cold war, and the decrease of traditional markets of TiAl, the strategy to develop other applications, strongly depends on the decrease of production costs. An alternative to the present production routes might be the use of traditional casting techniques, by induction melting of the alloy in a ceramic crucible and pouring into ceramic moulds, made by the investment casting process. However, due to the high reactivity of Ti alloys, the use of traditional ceramic materials cannot be used, as they lead to oxide formation and oxygen pick up both from the crucible and the moulding materials. In this work, the relative oxygen concentration of Ti-48Al castings was measured by SIMS ó Secondary Ion Mass Spectrometry. This technique provides a direct measurement of the isotopic composition with high sensitivity. The cylindrical samples were specially prepared to allow the analysis of the area close to the border. Oxygen profiles were acquired for samples obtained with different mould materials. The comparison of such profiles with hardness ones gives insight in the role of the oxygen concentration in the properties of the alloy and in the choice of the most suitable materials for TiAl production

Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Martins, RMS, Silva, M. A. G., RJC, Fernandes, and FMB. "{In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films}." 455-456 (2004): 342-345. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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