{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}

Citation:
Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76.

Abstract:

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Notes:

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