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2004
Montilla, F., A. Galindo, V. Rosa, and T. Aviles. "Effect of trimethylsilyl substitution on the chemical properties of triarylphosphines and their corresponding metal-complexes: Solubilising effect in supercritical carbon dioxide." Dalton T (2004): 2588-2592. AbstractWebsite

The donor strengths of the following triarylphosphine ligands P(Ar)(2)(Ar') (Ar = Ar' = 4-Me3SiC6H4, 1b; 4-Me3CC6H4, 1d; 4-F3CC6H4, 1e; Ar = C6H5, Ar' = 4-Me3SiC6H4, 1c) have been evaluated experimentally and theoretically. The measurements of the J(P-Se) coupling constants of the corresponding synthesised selenides Se=P(Ar)(2)(Ar'), 2b, c and the DFT calculation of the energies of the phosphine lone-pair ( HOMO) reveal insignificant influence on the electronic properties of the substituted phosphines when the trimethylsilyl group is attached to the aryl ring, in marked contrast to the strong electronic effect of the trifluoromethyl group. These triarylphosphine ligands P(Ar)(2)(Ar') reacted with (eta(5)-C5H5)Co(CO)(2), (eta(5)-C5H5)Co(CO)I-2 or PdCl2 to yield the new compounds (eta(5)-C5H5)Co(CO)[P(Ar)(2)(Ar')], 3b, d; (eta(5)-C5H5)COI[P(Ar)(2)(Ar')], 4b-e; and PdCl2[P(Ar)(2)(Ar')](2), 5b, c, respectively. These complexes have been characterized and their spectroscopic properties compared with those reported for the known triphenylphosphine complexes. Again, the contrast of the P-31 NMR and C-13 NMR chemical shifts or C-O or M-Cl stretching frequencies, when applied, does not show an important electronic effect on the metal complex of the trimethylsilyl substituted phosphines with respect to P(C6H5)(3) derivatives. Solubility measurements of complexes 3a and 3b in scCO(2) were performed. We conclude that Me3Si groups on the triarylphosphine improve the solubility of the corresponding metal complex in scCO(2).

Martins, R., H. Aguas, I. Ferreira, E. Fortunato, L. Raniero, and P. Roca Cabarrocas. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz." Materials Science Forum. 455 (2004): 100-103. Abstract
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Martins, R., H. Aguas, I. Ferreira, E. Fortunato, L. Raniero, and P. Roca Cabarrocas. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 100-103. Abstract
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Aguas, H., L. Pereira, L. Raniero, E. Fortunato, and R. Martins. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 73-76. Abstract
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Pereira, L., H. Aguas, L. Raniero, R. M. S. Martins, E. Fortunato, and R. Martins. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 112-115. Abstract
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Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 69-72. Abstract
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Carvalho, AL, A. Goyal, JAM Prates, DN Bolam, HJ Gilbert, VMR Pires, LMA Ferreira, A. Planas, MJ Romao, and CMGA Fontes. "The family 11 carbohydrate-binding module of Clostridium thermocellum Lic26A-Cel5E accommodates beta-1,4- and beta-1,3-1,4-mixed linked glucans at a single binding site." Journal of Biological Chemistry. 279 (2004): 34785-34793. Abstract
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Pereira, LuÍs, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, Leandro Raniero, S. Zang, and L. Boufendi. "Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz." Materials Science Forum. 455 (2004): 532-535. Abstract
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Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz." Materials Science Forum. 455-456 (2004): 532-535. AbstractWebsite

This paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.

Raniero, Leandro, Rodrigo Martins, Hugo Águas, S. Zang, Isabel Ferreira, Lu{\'ıs Pereira, Elvira Fortunato, and L. Boufendi. "Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 532-535. Abstract
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Águas, Hugo, Lu{\'ıs Pereira, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 73-76. Abstract
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Hettmann, T., R. A. Siddiqui, C. Frey, T. Santos-Silva, MJ Romão, and S. Diekmann. "Mutagenesis study on amino acids around the molybdenum centre of the periplasmic nitrate reductase from Ralstonia eutropha." Biochemical and Biophysical Research Communications. 320 (2004): 1211-1219. Abstract
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Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "Next generation of thin film transistors based on zinc oxide." Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352. Abstract
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Pereira, Lu{\'ıs, Hugo Águas, Leandro Raniero, Rui Miguel S. Martins, Elvira Fortunato, and Rodrigo Martins. "Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 112-115. Abstract
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Aguas, H., L. Raniero, L. Pereira, A. S. Viana, E. Fortunato, and R. Martins. "Role of the rf frequency on the structure and composition of polymorphous silicon films." Journal of non-crystalline solids. 338 (2004): 183-187. Abstract
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Silva, A., Leandro Raniero, E. Ferreira, Hugo Águas, Lu{\'ıs Pereira, Elvira Fortunato, and Rodrigo Martins. "Silicon etching in CF4/O2 and SF6 atmospheres." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 120-123. Abstract
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Raniero, L., N. Martins, P. Canhola, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Spectral response of large area amorphous silicon solar cells." High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 8.2 (2004). Abstract
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Raniero, L., Martins Canhola Pereira Ferreira Fortunato Martins N. P. S. "Spectral response of large area amorphous silicon solar cells." High Temperature Material Processes. 8 (2004): 293-299. AbstractWebsite

In this work we report the study of spectral response on large area amorphous silicon solar cells (30×40 cm2), deposited through plasma enhanced chemical vapour deposition technique (PECVD) at excitation frequencies of 27.12MHz. To perform this work, the solar cells were split in units of area of 0.126 cm2, which allows determining the device homogeneity over all the entire solar cell. Emphasis of this work is put the role of thickness and optical band gap of p-doped layer on the collection efficiency, spectral response, current density-voltage curves under standard condition and spectroscopy impedance. The results show that high transparent p-doped layer can be deposited at 42mW/cm2, which allows increasing the collection efficiency in 45%, at the blue region. The spectroscopy impedance performed showed to be efficient in analyzing the device shunt resistance, interfaces role on the device performances and the behaviour of the device depletion region, for the range of frequencies analysed.

Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "Sputtering preparation of silicon nitride thin films for gate dielectric applications." Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 69-72. Abstract
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Pereira, Lu{\'ıs, Hugo Águas, Rui Igreja, Rui Miguel S. Martins, N. Nedev, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "Sputtering preparation of silicon nitride thin films for gate dielectric applications." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 69-72. Abstract
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Dias, JM, T. Alves, C. Bonifacio, AS Pereira, J. Trincao, D. Bourgeois, I. Moura, and MJ Romao. "Structural basis for the mechanism of Ca2+ activation of the di-heme cytochrome c peroxidase from Pseudomonas nautica 617." Structure. 12 (2004): 961-973. AbstractWebsite

Cytochrome c peroxidase (CCP) catalyses the reduction of H2O2 to H2O, an important step in the cellular detoxification process. The crystal structure of the di-heme CCP from Pseudomonas nautica 617 was obtained in two different conformations in a redox state with the electron transfer heme reduced. Form IN, obtained at pH 4.0, does not contain Ca2+ and was refined at 2.2 Angstrom resolution. This inactive form presents a closed conformation where the peroxidatic heme adopts a six-ligand coordination, hindering the peroxidatic reaction from taking place. Form OUT is Ca2+ dependent and was crystallized at pH 5.3 and refined at 2.4 Angstrom resolution. This active form shows an open conformation, with release of the distal histidine (His71) ligand, providing peroxide access to the active site. This is the first time that the active and inactive states are reported for a di-heme peroxidase.

Dyke, J. M., G. Levita, A. Morris, J. S. Ogden, A. A. Dias, M. Algarra, J. P. Santos, M. L. Costa, P. Rodrigues, and M. T. Barros. "A Study of the Thermal Decomposition of 2-Azidoacetamide by Ultraviolet Photoelectron Spectroscopy and Matrix-Isolation Infrared Spectroscopy:  Identification of the Imine Intermediate H2NCOCHNH." The Journal of Physical Chemistry A. 108 (2004): 5299-5307. AbstractWebsite

The thermal decomposition of 2-azidoacetamide (N3CH2CONH2) has been studied by matrix-isolation infrared spectroscopy and real-time ultraviolet photoelectron spectroscopy. N2, CH2NH, HNCO, CO, NH3, and HCN are observed as high-temperature decomposition products, while at lower temperatures, the novel imine intermediate H2NCOCHNH is observed in the matrix-isolation IR experiments. The identity of this intermediate is confirmed both by ab initio molecular orbital calculations of its IR spectrum and by the temperature dependence and distribution of products in the photoelectron spectroscopy (PES) and IR studies. Mechanisms are proposed for the formation and decomposition of the intermediate consistent both with the observed results and with estimated activation energies based on pathway calculations.

Rodrigues, G. C., P. Indelicato, J. P. Santos, P. Patté, and F. Parente. "Systematic calculation of total atomic energies of ground state configurations." Atomic Data and Nuclear Data Tables. 86 (2004): 117-233. AbstractWebsite

We present a systematic study of atomic binding energies, in the Dirac–Fock approximation, for the Lithium (3 electrons) to the Dubnium (105 electrons) isoelectronic series. In each series we have considered all atomic numbers from the one corresponding to the neutral atom up to Z=118. We have obtained the ground state configurations for several heavy ions with charge larger than one.

Aelenei, Laura, A. M. Rodrigues, and Daniel Aelenei. "The Ventilation Effect on the Thermal Performance of a Cavity Wall: Numerical and Experimental Analysis." ROOMVENT 2004 - 9th International Conference on Air Distribution in Rooms. 972-07973-2-3. 2004. Abstract
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Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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