Martins, R., H. Aguas, I. Ferreira, E. Fortunato, L. Raniero, and P. Roca Cabarrocas. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 100-103.
Abstractn/a
Aguas, H., L. Pereira, L. Raniero, E. Fortunato, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 73-76.
Abstractn/a
Pereira, L., H. Aguas, L. Raniero, R. M. S. Martins, E. Fortunato, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 112-115.
Abstractn/a
Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 69-72.
Abstractn/a
Carvalho, AL, A. Goyal, JAM Prates, DN Bolam, HJ Gilbert, VMR Pires, LMA Ferreira, A. Planas, MJ Romao, and CMGA Fontes. "
The family 11 carbohydrate-binding module of Clostridium thermocellum Lic26A-Cel5E accommodates beta-1,4- and beta-1,3-1,4-mixed linked glucans at a single binding site."
Journal of Biological Chemistry. 279 (2004): 34785-34793.
Abstractn/a
Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "
Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz."
Materials Science Forum. 455-456 (2004): 532-535.
AbstractThis paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.
Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "
Next generation of thin film transistors based on zinc oxide."
Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352.
Abstractn/a
Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "
Sputtering preparation of silicon nitride thin films for gate dielectric applications."
Advanced Materials Forum Ii. Eds. R. Martins, E. Fortunato, I. Ferreira, and C. Dias. Vol. 455-456. Materials Science Forum, 455-456. 2004. 69-72.
Abstractn/a