The aim of this work is to determine the role of different metal contacts on the performances of one-dimensional thin-film position-sensitive detectors produced by plasma-enhanced chemical vapour deposition, to be used in optical rulers for alignment applications. The device consists on an indium tin oxide/p-i-n structure where the metal contacts used were based on Al, Al + Cu and Ag. The results achieved show that the contact mainly influences the final sensor range by limiting the magnitude of the analogue signals recorded. In spite of soldering problems the Al contact was the contact that lead to better discrimination of the sensor, with a nonlinearity of ±0.8% and a fall-off parameter of 3.2 × 10-3 cm-1. The Al + Cu contact also exhibits good performances (nonlinearity, of ±1.1%; fall-off parameter, 1.4 × 10-2 cm-1) and should be chosen since it is much easier to solder but requires protection against oxidation. The integration of these sensors on the optical ruler lead to the production of a system with a response time below 0.5 ms, an accuracy better than ±1% and a mechanical precision of better than 0.25 mm in 100 mm, with a full-scale noise below ±0.1%.

The aim of this paper is to present results concerning the morphology, structure, mechanical and electrical characteristics of the new proposed Cu-Sn metallurgical alloy, which may be used in electronic joins. By proper choice of process temperature and pressure, Cu coated surfaces are soldered using Sn as pre-form. The main results achieved indicate that the formation of Cu3Sn phase begins at a temperature of about 473 K and that the Sn thickness (dSn) needed is slightly above 7 μm. Due to join wettability, higher temperatures (between 523 and 573 K) and dSn above 35 μm are required to form joins within the specifications of the electronic industry.

The aerobic purification of Pseudomonas nautica 617 nitrous oxide reductase yielded two forms of the enzyme exhibiting different chromatographic behaviors. The protein contains six copper atoms per monomer, arranged in two centers named CUA and Cut. Cut could be neither oxidized nor further reduced under our experimental conditions, and exhibits a 4-line EPR spectrum (g(x)= 2.015, A(x) = 1.5 mT, g(y) = 2.071, A(y) = 2 mT, g(z) = 2.138, A(z) = 7 mT) and a strong absorption at similar to 640 nm. Cu-A can be stabilized in a reduced EPR-silent state and in an oxidized state with a typical 7-line EPR spectrum (g(x) g(y) = 2.021, A(x) = A(y) = 0 T, g(z) =0.178, A(z) = 4 mT) and absorption bands at 480, 540, and similar to 800 nm. The difference between the two purified forms of nitrous oxide reductase is interpreted as a difference in the oxidation state of the CuA center. In form A, CUA is predominantly oxidized (S = 1/2, Cu1.5+-Cu1.5+), while in form B it is mostly in the one-electron reduced state (S = 0, Cu1+-Cu1+). In both forms, Cu-Z remains reduced (S = 1/2). Complete crystallographic data at 2.4 Angstrom indicate that Cu-A is a binuclear site (similar to the site found in cytochrome c oxidase) and Cu-Z is a novel tetracopper cluster [Brown, K., et ai. (2000) Nat. Struct. Biol. (in press)]. The complete amino acid sequence of the enzyme was determined and comparisons made with sequences of other nitrous oxide reductases, emphasizing the coordination of the centers. A 10.3 kDa peptide copurified with both forms of nitrous oxide reductase shows strong homology with proteins of the heat-shock GroES chaperonin family.

The numerical implementation of the displacement model of the hybrid-{T}refftz finite element formulation is presented. The geometry of the supporting element is not constrained a priori. Unbounded, non-convex and multiply connected elements can be used. The approximation basis is naturally hierarchical and very rich. It is constructed on polynomial solutions of the governing differential equation, and extended to include the particular terms known to model accurately important local effects, namely the singular stress patterns due to cracks or point loads. Numerical and semi-analytical methods are used to compute the finite element matrices and vectors, all of which present boundary integral expressions. Appropriate procedures to store, manipulate and solve symmetric highly sparse systems are used. The characteristics of the finite element solving system in terms of sparsity and conditioning are analysed, as well as its sensitivity to the effects of mesh distortion, incompressibility and rotation of the local reference systems. Benchmark tests are used also to illustrate the performance of the element in the estimation of displacements, stresses and stress intensity factors.

The present paper describes the properties of a photochemical sensor based on amorphous silicon MIS (Metal-Insulator-Semiconductor) diodes. The structure of the sensors used in this work are based on glass/Cr/a-SiH(n +)/a-Si:H(i)SiOx/Pd, where the amorphous silicon layers have been deposited by conventional plasma r.f. techniques. The proposed photochemical sensors present a 2-3 orders of magnitude change in the saturation current and a decrease of up to 40% on the open circuit voltage when in the presence of 400 ppm of hydrogen. The overall performance of these sensors, associated with the low cost fabrication technology, suggests that, in the near future, it will be possible to use them in several industrial applications. © 1998 Elsevier Science Ltd. All rights reserved.

The increasing demand in automation processes in finishing techniques also calls for automatic measurement and inspection methods. These methods ought to be installed as close as possible to the production process and they ought to measure the values needed in a safe and fast way, without disturbing the process itself. Simultaneously they should be free of wear and insensitive against mechanical perturbations. This approach can be reached by proper combination of the laser triangulation technique with an array of linear position sensitive detectors, able to supply information about the surface finishing of an object. This is the aim of this paper that envisages to present experimental results of the performances exhibited by such an array constituting 128 elements. The analogue information supplied by this array is processed by an analogue/digital converter, directly coupled to the array and whose information is computer processed, concerning the recognition of patterns and the processing of information collected over the object to be inspected. © 1999 Elsevier Science S.A. All rights reserved.

This work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100 °C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200 °C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10-1 S/cm to 10-3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.

In this work we present data concerning the structure, composition and electro-optical performances of nanocrystalline silicon carbide doped films produced at the different filament temperatures and hydrogen dilution ratios. The XRD spectra reveal the presence of the typical Si peaks ascribed to (111) (220) and (311) diffraction planes, where no traces of the carbon peaks were found. The average grain sizes ranges from 10 nm to 30 nm, depending on the temperature of filament and hydrogen dilution used. We observed an enhancement of the peak ascribed to the (220) plane when high H dilution rates are used, meaning that the film starts being textured. The infrared data reveal the typical silicon carbide modes and a hydrogen content that varies from 3% to 1%, with the increase of the filament temperature. Besides that, the IR spectra show the typical SiO2 and SiO modes, associated to the oxide species that are mainly incorporated in the surface of the films and can be removed by proper wet etching. The planar conductivity is enhanced as the temperature of the filament is increased, being the highest conductivity achieved in the range of 0.2 (Ωcm)-1 and almost non activated. © 1998 Elsevier Science Ltd. All rights reserved.