In this paper, we present the optical, electrical, structural and mechanical properties exhibited by aluminum-doped zinc oxide (ZnO:Al) thin films produced by RF magnetron sputtering on polymeric substrates (polyethylene terephthalate, PET; Mylar type D from Dupont®) with a standard thickness of 100 μm. The influence of the uniaxial tensile strain on the electrical resistance of these films was evaluated in situ for the first time during tensile elongation. In addition, the role of the thickness on the mechanical behavior of the films was also evaluated. The preliminary results reveal that the increase in electrical resistance is related to the number of cracks, as well as the crack width, which also depends on the film thickness. © 2002 Elsevier Science B.V. All rights reserved.

For the study of astrophysically relevant capture reactions in the underground laboratory LUNA a new setup of high sensitivity has been implemented. The setup includes a windowless gas target, a 4$π$ BGO summing crystal, and beam calorimeters. The setup has been recently used to measure the d(p,$\gamma$)3He cross-section for the first time within its solar Gamow peak, i.e. down to 2.5keV c.m. energy. The features of the optimized setup are described. © 2002 Elsevier Science B.V. All rights reserved.

New cationic mono-cyclopentadienyl complexes of Co(III) containing mono or bidentate nitrogen donor ligands of general formula [Co(eta (5)-C5H5)(PPh3)L-2][BF4](2) (L = NC-CH3, 2, and NC = Ph, 3) or [Co(eta (5)-C5H5)(PPh3)(L-L)[BF4](2), [L-L = 2,2 ' -bisimidazole (H(2)biim) (4) and dipyridylamine [HN(NC5H5)(2)] (5) have been synthesised by the stoichiometric reaction of the Co(III) complex Co(eta (5)-C5H5)(PPh3)I-2 (1), with Ag[BF4] and the appropriate ligand in CH2Cl2. Under the same conditions and using;trans-azobenzene as a ligand, an orthometalation reaction took placet giving the new compound [Co(eta (5)-C5H5)(PPh3)(kappa -C,kappa -N-C6H4N=NPh)][BF4] (6) in high yield. The structural characterisation of compounds 4 and 6, and of the starting compound Co(eta (5)-C5H5)(PPh3)I-2 (1) was done by single-crystal X-ray diffraction studies. DFT calculations (ADF program) were performed in order to understand the orthometallation reaction. (C) 2001 Elsevier Science B.V. All rights reserved.

The paper reports on the work on hybrid-{T}refftz finite elements developed by the Structural Analysis Research Group, ICIST, Technical University of Lisbon. A dynamic elastoplastic problem is used to describe the technique used to establish the alternative stress and displacement models of the hybrid-{T}refftz finite element formulations. They are derived using independent time, space and finite element bases, so that the resulting solving systems are symmetric, sparse, naturally $p$-adaptive and particularly well suited to parallel processing. The performance of the hybrid-{T}refftz stress and displacement models is illustrated with a number of representative static and dynamic applications of elastic and elastoplastic structural problems.

Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.