Thin film metal oxide semiconductors deposited on polymeric substrates

Citation:
Fortunato, E., Nunes Marques Costa Águas Ferreira Costa Martins P. A. D. "Thin film metal oxide semiconductors deposited on polymeric substrates." Materials Research Society Symposium - Proceedings. Vol. 666. 2001. F1131-F1136.

Abstract:

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzke structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low 3.6×10-2 Ωcm have been obtained, as deposited.

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