Pd-metal/insulator/semiconductor based on hydrogenated amorphous silicon were produced by plasma enhanced chemical vapour deposition with two different oxidised surfaces: thermal in ambient air and chemical with hydrogen peroxide. The diode characteristics have been investigated using dark and light current as f(v) measurements in the temperature range from 300 K to 380 K, from which it was possible to infer the electron barrier height. The data obtained show that the incorporation of a thin insulator layer between the semiconductor and the metal improves the performances of the devices by preventing the formation of suicides at the interface. Apart from that we also show that the MIS structures with the thermal oxide presents 'better' performances than the ones with the chemical oxide due to the type of interface states and of the oxide charges associated with the interface between the insulator and the semiconductor. © 1998 Elsevier Science B.V. All rights reserved.

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In this paper, we present results of the role of laser beam energy and shot density on the electro-optical and structural properties of undoped and doped recrystallized amorphous silicon thin films, generated by pulsed Nd-YAG laser (λ = 532 nm). The data reveal that the structure and electrical characteristics of the recrystallized thin films are mainly dependent on the energy and shot density of the laser beam, while the morphology of the obtained films are mainly governed by the number of shots used. The data also show that the electrical conductivity of undoped and doped recrystallized films can be varied up to 6 orders of magnitude, by the proper choice of the recrystallization conditions. Doped samples with conductivities in the amorphous states in the range of 10-5 Ω-1 cm-1 present, after recrystallization, conductivities of about 300 Ω-1 cm-1. The SEM micro-chemical analysis also shows that the obtained crystalline grains are constituted by pure silicon. © 1998 Elsevier Science S.A.

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To provide high-level graphical support for PVM (Parallel Virtual Machine) based program development, a complex programming environment (GRADE) is being developed. GRADE currently provides tools to construct, execute, debug, monitor and visualise message-passing parallel programs. It offers high-level graphical programming abstraction mechanism to construct parallel applications by introducing a new graphical language called GRAPNEL. GRADE also provides the programmer with the same graphical user interface during the program design and debugging stages. A distributed debugging engine (DDBG) assists the user in debugging GRAPNEL programs on distributed memory computer architectures. Tape/PVM and PROVE support the performance monitoring and visualization of parallel programs developed in the GRADE environment.

To provide high-level graphical support for PVM (Parallel Virtual Machine) based program development, a complex programming environment (GRADE) is being developed. GRADE currently provides tools to construct, execute, debug, monitor and visualise message-passing parallel programs. It offers high-level graphical programming abstraction mechanism to construct parallel applications by introducing a new graphical language called GRAPNEL. GRADE also provides the programmer with the same graphical user interface during the program design and debugging stages. A distributed debugging engine (DDBG) assists the user in debugging GRAPNEL programs on distributed memory computer architectures. Tape/PVM and PROVE support the performance monitoring and visualization of parallel programs developed in the GRADE environment.

The behaviour of a microcrystalline p-i-n junction locally illuminated with monochromatic radiation (incident power of 50 mW/cm2) is analysed by means of numerical experiences. The model used for the two-dimensional analysis of the transport properties of a μc-Si:H p-i-n photo-detector is based on the simultaneous solution of the continuity equations for holes and electrons together with the Poisson's equation. The solution is found on a rectangular domain, taking into account the dimension perpendicular to the junction plane and one on the parallel plane. The lateral effects occurring within the structure, due to the non-uniformity of the illumination, are outlined. The results we present show that the potential profile has a linear variation from the illuminated to the dark neutral region. The lateral components of the electric field and of the current density vectors reveal to be mainly localised inside the doped layers.

Hydrogenated amorphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

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Microcrystalline p-i-n silicon devices are a prospective contender for application in large-area optoelectronics. In this paper we analyse the behaviour of a μc-Si:H p-i-n photodevice under non-uniform illumination. The effect of a spatially non-uniform illumination is to create lateral electric fields and current flows inside the structure. We present in this paper a numerical application of a complete bidimensional model describing the transport properties within the structure. The continuity equations forholes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The results of simulating p-i-n μc-Si:H junctions under non-uniform illumination show that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. © 1997 Elsevier Science S.A.

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We report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/μc-Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p-i-n μc-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. ©2004 Copyright SPIE - The International Society for Optical Engineering.

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The structure of desulfoferrodoxin (DFX), a protein containing two mononuclear non-heme iron centres, has been solved by the MAD method using phases determined at 2.8 Angstrom resolution. The iron atoms in the native protein were used as the anomalous scatterers. The model was built from an electron density map obtained after density modification and refined against data collected at 1.9 Angstrom. Desulfoferrodoxin is a homodimer which can be described in terms of two domains, each with two crystallographically equivalent non-heme mononuclear iron centres. Domain I is similar to desulforedoxin with distorted rubredoxin-type centres, and domain II has iron centres with square pyramidal coordination to four nitrogens from histidines as the equatorial ligands and one sulfur from a cysteine as the axial ligand. Domain I in DFX shows a remarkable structural fit with the DX homodimer. Furthermore, three beta-sheets extending from one monomer to another in DFX, two in domain I and one in domain II, strongly support the assumption of DFX as a functional dimer. A calcium ion, indispensable in the crystallisation process, was assumed at the dimer interface and appears to contribute to dimer stabilisation. The C-terminal domain in the monomer has a topology fold similar to that of fibronectin III.

{Crystals of the fully oxidized form of desulfoferrodoxin were obtained by vapor diffusion from a solution containing 20% PEG 4000, 0.1 M HEPES buffer, pH 7.5, and 0.2 M CaCl2. Trigonal and/or rectangular prisms could be obtained, depending on the temperature used for the crystal growth. Trigonal prisms belong to the rhombohedral space group R32, with a = 112.5 A and c = 63.2 A; rectangular prisms belong to the monoclinic space group C2, with a = 77.7 A

This communication reports the isolation, purification and characterization of key enzymes involved in dissimilatory sulfate reduction of a sulfate reducing bacterium classified as Desulfovibrio desulfuricans subspecies desulfuricans New Jersey (NCIMB 8313) (Ddd NJ). The chosen strain, originally recovered from a corroding cast iron heat exchanger, was grown in large scale batch cultures. Physico-chemical and spectroscopic studies of the purified enzymes were carried out. These analyses revealed a high degree of similarity between proteins isolated from the DddNJ strain and the homologous proteins obtained from Desulfomicrobium baculatus Norway 4. In view of the results obtained, taxonomic reclassification of Desulfovibrio desulfuricans subspecies desulfuricans New Jersey (NCIMB 8313) into Desulfomicrobium baculatus (New Jersey) is proposed. (C) 1996 Academic Press, Inc.

This communication reports the isolation, purification and characterization of key enzymes involved in dissimilatory sulfate reduction of a sulfate reducing bacterium classified as Desulfovibrio desulfuricans subspecies desulfuricans New Jersey (NCIMB 8313) (Ddd NJ). The chosen strain, originally recovered from a corroding cast iron heat exchanger, was grown in large scale batch cultures. Physico-chemical and spectroscopic studies of the purified enzymes were carried out. These analyses revealed a high degree of similarity between proteins isolated from the DddNJ strain and the homologous proteins obtained from Desulfomicrobium baculatus Norway 4. In view of the results obtained, taxonomic reclassification of Desulfovibrio desulfuricans subspecies desulfuricans New Jersey (NCIMB 8313) into Desulfomicrobium baculatus (New Jersey) is proposed. (C) 1996 Academic Press, Inc.

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A Linear array Thin Film Position Sensitive Detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3D inspections/measurements. Each element consists on a 1D LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it will be possible to acquire information about an object/surface, through the optical cross- section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).

This work presents the main static and dynamic performances showed by one dimensional thin film position sensitive detectors (1D TFPSD), based on a-Si:H technology, with a size of 80 mm × 5 mm. The results obtained show that the TFPSD is able to respond to light powers as low as 2μ W/cm2, presenting a detection accuracy, linearity and response frequency better than 10 μm, 2% and 2 KHz, respectively. These results are quite promising regarding the application of these sensors to a wide variety of optical inspection systems where continuous quality control is required.