Publications

Export 575 results:
Sort by: Author Title Type [ Year  (Desc)]
2015
Ferreira, M., Loureiro Nogueira Rodrigues Martins Ferreira J. A. A. "SnO2 thin Film Oxides Produced by rf Sputtering for Transparent Thermoelectric Devices." Materials Today: Proceedings. Vol. 2. 2015. 647-653. Abstract

The combination of high transparency and good thermoelectric properties of SnO2 can open new field of applications for the thin film thermoelectric materials. Here we report on SnO2 thin films with transmittance above 90%, resistivity bellow 10-3Ωm and a Power Factor around 10-4 W/m.K2, for a Seebeck of -255μV/K, at room temperature. The effect of film thickness and post-deposition annealing on the thermoelectric properties were analysed. The performances of a single layer thermoelectric device are also presented. © 2015 .

Vicente, A.a, Águas Mateus Araújo Lyubchyk Siitonen Fortunato Martins H. a T. a. "Solar cells for self-sustainable intelligent packaging." Journal of Materials Chemistry A. 3 (2015): 13226-13236. AbstractWebsite

Nowadays there is a strong demand for intelligent packaging to provide comfort, welfare and security to owners, vendors and consumers by allowing them to know the contents and interact with the goods. This is of particular relevance for low cost, fully disposable and recyclable products, such as identification tags and medical diagnostic tests, and devices for analysis and/or quality control in food and pharmaceutical industries. However, the increase of complexity and processing capacity requires continuous power and can be addressed by the combined use of a small disposable battery, charged by a disposable solar cell, which is able to work under indoor lighting. Herein, we show a proof-of-concept of the pioneering production of thin-film amorphous silicon (a-Si:H) solar cells with an efficiency of 4% by plasma enhanced chemical vapour deposition (PECVD) on liquid packaging cardboard (LPC), which is commonly used in the food and beverage industries. Such accomplishment put us one step closer to this revolution by providing a flexible, renewable and extremely cheap autonomous energy packaging system. Moreover, such Si thin films take advantage of their good performance at low-light levels, which also makes them highly desirable for cheap mobile indoor applications. © The Royal Society of Chemistry.

Santos, L., Nunes Calmeiro Branquinho Salgueiro Barquinha Pereira Martins Fortunato D. T. R. "Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors." ACS Applied Materials and Interfaces. 7 (2015): 638-646. AbstractWebsite

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping. © 2014 American Chemical Society.

Santos, L.a, Wojcik Pinto Elangovan Viegas Pereira Martins Fortunato P. a J. V. "Structure and morphologic influence of WO3 nanoparticles on the electrochromic performance of dual-phase a -WO3/WO3 inkjet printed films." Advanced Electronic Materials. 1 (2015). AbstractWebsite

The optimization of tungsten trioxide (WO3) nanoparticles produced via hydrothermal synthesis for application in electrochromic (EC) devices is reported. The structure and morphology of the nanoparticles are controlled by changing the acidity of the aqueous solvent added to the sol-gel precursor (peroxopolytungstic acid) during synthesis. Orthorhombic hydrated WO3 nanorods or monoclinic WO3 nanoslabs are obtained when HCl is added, while synthesis only in aqueous medium results in a mixture of both types of polymorphs. Dual-phase thin films are processed by inkjet printing deposition of the nanoparticles in flexible polyethylene terephthalate substrate with indium tin oxide coating (ITO PET) followed by the deposition of the precursor solution. When compared with purely amorphous tungsten oxide films, the dual phase ones present higher optical densities and improved capacity, and cyclability stability. The best results, obtained for orthorhombic hydrated nanoparticles (ortho -WO3 ·0.33H2 O), are due to its high surface area and improved conductivity. Additionally, the ex situ X-ray diffraction (XRD) lithiation studies show evidence of a higher distortion of the monoclinic when compared with the orthorhombic crystallographic structure, which contribute to the inferior EC performance. These results validate the use of inkjet printing deposition with low processing temperatures for EC dual-phase thin films containing optimized nanoparticles which are compatible with low-cost substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wojcik, P.J., Santos Pereira Martins Fortunato L. L. R. "Tailoring nanoscale properties of tungsten oxide for inkjet printed electrochromic devices." Nanoscale. 7 (2015): 1696-1708. AbstractWebsite

This paper focuses on the engineering procedures governing the synthesis of tungsten oxide nanocrystals and the formulation of printable dispersions for electrochromic applications. By that means, we aim to stress the relevancy of a proper design strategy that results in improved physicochemical properties of nanoparticle loaded inks. In the present study inkjet printable nanostructured tungsten oxide particles were successfully synthesized via hydrothermal processes using pure or acidified aqueous sol-gel precursors. Based on the proposed scheme, the structure and morphology of the nanoparticles were tailored to ensure the desired printability and electrochromic performance. The developed nanomaterials with specified structures effectively improved the electrochemical response of printed films, resulting in 2.5 times higher optical modulation and 2 times faster coloration time when compared with pure amorphous films. © The Royal Society of Chemistry 2015.

Águas, H.a, Mateus Vicente Gaspar Mendes Schmidt Pereira Fortunato Martins T. a A. a. "Thin Film Silicon Photovoltaic Cells on Paper for Flexible Indoor Applications." Advanced Functional Materials. 25 (2015): 3592-3598. AbstractWebsite

The present development of non-wafer-based photovoltaics (PV) allows supporting thin film solar cells on a wide variety of low-cost recyclable and flexible substrates such as paper, thereby extending PV to a broad range of consumer-oriented disposable applications where autonomous energy harvesting is a bottleneck issue. However, their fibrous structure makes it challenging to fabricate good-performing inorganic PV devices on such substrates. The advances presented here demonstrate the viability of fabricating thin film silicon PV cells on paper coated with a hydrophilic mesoporous layer. Such layer can not only withstand the cells production temperature (150 C), but also provide adequate paper sealing and surface finishing for the cell's layers deposition. The substances released from the paper substrate are continuously monitored during the cell deposition by mass spectrometry, which allows adapting the procedures to mitigate any contamination from the substrate. In this way, a proof-of-concept solar cell with 3.4% cell efficiency (41% fill factor, 0.82 V open-circuit voltage and 10.2 mA cm-2 short-circuit current density) is attained, opening the door to the use of paper as a reliable substrate to fabricate inorganic PV cells for a plethora of indoor applications with tremendous impact in multi-sectorial fields such as food, pharmacy and security. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Águas, H.a, Mateus Vicente Gaspar Mendes Schmidt Pereira Fortunato Martins T. a A. a. "Thin Film Silicon Photovoltaic Cells on Paper for Flexible Indoor Applications." Advanced Functional Materials (2015). AbstractWebsite

The present development of non-wafer-based photovoltaics (PV) allows supporting thin film solar cells on a wide variety of low-cost recyclable and flexible substrates such as paper, thereby extending PV to a broad range of consumer-oriented disposable applications where autonomous energy harvesting is a bottleneck issue. However, their fibrous structure makes it challenging to fabricate good-performing inorganic PV devices on such substrates. The advances presented here demonstrate the viability of fabricating thin film silicon PV cells on paper coated with a hydrophilic mesoporous layer. Such layer can not only withstand the cells production temperature (150 °C), but also provide adequate paper sealing and surface finishing for the cell's layers deposition. The substances released from the paper substrate are continuously monitored during the cell deposition by mass spectrometry, which allows adapting the procedures to mitigate any contamination from the substrate. In this way, a proof-of-concept solar cell with 3.4% cell efficiency (41% fill factor, 0.82 V open-circuit voltage and 10.2 mA cm-2 short-circuit current density) is attained, opening the door to the use of paper as a reliable substrate to fabricate inorganic PV cells for a plethora of indoor applications with tremendous impact in multi-sectorial fields such as food, pharmacy and security. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pavan, M.a, Rühle Ginsburg Keller Barad Sberna Nunes Martins Anderson Zaban Fortunato S. b A. b. "TiO2/Cu2O all-oxide heterojunction solar cells produced by spray pyrolysis." Solar Energy Materials and Solar Cells. 132 (2015): 549-556. AbstractWebsite

Here we present for the first time a TiO2/Cu2O all-oxide heterojunction solar cell entirely produced by spray pyrolysis onto fluorine doped tin oxide (FTO) covered glass substrates, using silver as a back contact. A combinatorial approach was chosen to investigate the impact of the TiO2 window layer and the Cu2O light absorber thicknesses. We observe an open circuit voltage up to 350 mV and a short circuit current density which is strongly dependent of the Cu2O thickness, reaching a maximum of  0.4 mA/cm2. Optical investigation reveals that a thickness of 300 nm spray pyrolysis deposited Cu2O is sufficient to absorb most photons with an energy above the symmetry allowed optical transition of 2.5 eV, indicating that the low current densities are caused by strong recombination in the absorber that consists of small Cu2O grains. © 2014 Elsevier Ltd. All rights reserved.

Branquinho, R., Salgueiro Santa Kiazadeh Barquinha Pereira Martins Fortunato D. A. A. "Towards environmental friendly solution-based ZTO/AlOx TFTs." Semiconductor Science and Technology. 30 (2015). AbstractWebsite

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context research efforts have been increasingly centred on the development of suitable solution-processed materials for oxide based transistors. Nevertheless, the majority of synthetic routes reported require the use of toxic organic solvents. In this work we report on a new environmental friendly solution combustion synthesis route, using ethanol as solvent, for the preparation of indium/gallium free amorphous zinc-tin oxide (ZTO) thin film transistors (TFTs) including AlOx gate dielectric. The decomposition of ZTO and AlOx precursor solutions, electrical characterization and stability of solution processed ZTO/AlOx TFTs under gate-bias stress, in both air and vacuum atmosphere, were investigated. The devices demonstrated low hysteresis (ΔV=0.23 V), close to zero turn on voltage, low threshold voltage (VT=0.36 V) and a saturation mobility of 0.8 cm2 V-1 s-1 at low operation voltages. Ethanol based ZTO/AlOx TFTs are a promising alternative for applications in disposable, low cost and environmental friendly electronics. © 2015 IOP Publishing Ltd.

Liu, A.a, Liu Zhu Meng Song Shin Fortunato Martins Shan G. a H. a. "A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors." Current Applied Physics. 15 (2015): S75-S81. AbstractWebsite

In this work, we develop a simple and eco-friendly water-inducement method for high-k yttrium oxide (YOx) dielectric. To prepare YOx thin films at low temperature, yttrium nitrate and deionized water were used as the source materials. No toxic organic materials were required in the YOx coating process. The YOx thin film annealed at 350 °C showed a low leakage current density of 2 × 10-9 A/cm2 at 5 MV/cm and a large areal-capacitance of 448 nF/cm2 at 1 kHz. On the basis of its implementation as the gate dielectric, the fully-water-induced In2O3 TFT based on YOx exhibited a high field-effect mobility of 15.98 cm2/Vs, excellent subthreshold swing of 75 mV/dec, an on/off current ratio of 6 × 106, and a negligible hysteresis of 50 mV. The as-fabricated TFT operated at a low voltage (∼1.5 V) and showed high drain current drive capability, enabling oxide TFT with a water-induced high-k dielectric for use in backplane electronics for low-power mobile display applications. © 2015 Elsevier B.V. All rights reserved.

2014
b b b b d b b Contreras, J.a b, Martins Wojcik Filonovich Aguas Gomes Fortunato Ferreira R. a P. a. "Color sensing ability of an amorphous silicon position sensitive detector array system." Sensors and Actuators, A: Physical. 205 (2014): 26-37. AbstractWebsite

The color sensing ability of a data acquisition prototype system integrating a 32 linear array of 1D amorphous silicon position sensitive detectors (PSD) was analyzed. Besides being used to reproduce a 3D profile of highly reflective surfaces, here we show that it can also differentiate primary red, green, blue (RGB) and derived colors. This was realized by using an incident beam with a RGB color combination and adequate integration times taking into account that a color surface mostly reflects its corresponding color. A mean colorimetric error of 25.7 was obtained. Overall, we show that color detection is possible via the use of this sensor array system, composed by a simpler amorphous silicon pin junction. © 2013 Elsevier B.V. All rights reserved.

b d Morawiec, S.a b, Mendes Filonovich Mateus Mirabella Aguas Ferreira Simone Fortunato Martins Priolo Crupi M. J. a S. "Photocurrent enhancement in thin a-Si:H solar cells via plasmonic light trapping." Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2014-January. 2014. Abstract

Photocurrent enhancement in thin a-Si:H solar cells due to the plasmonic light trapping is investigated, and correlated with the morphology and the optical properties of the selfassembled silver nanoparticles incorporated in the cells' back reflector. © 2014 Optical Society of America.

Bahubalindruni, P.a, Tavares Duarte Cardoso Oliveira Barquinha Martins Fortunato V. a C. a. "Transparent current mirrors using A-GIZO TFTs: Simulation with RBF models and fabrication." Proceedings - UKSim-AMSS 16th International Conference on Computer Modelling and Simulation, UKSim 2014. 2014. 582-586. Abstract

This paper analyzes transparent two-TFT current mirrors using a-GIZO TFTs with different mirroring ratios. In order to achieve a high mirroring ratio, the output TFT in the circuit employed a fingered structure layout to minimize area and overlap capacitance. The analysis of the current mirrors is performed in three phases. In the first, a radial basis function based (RBF) model is developed using measured data from fabricated TFTs on the same chip. Then, in the second phase, the RBF model is implemented in Verilog-A that is used to simulate two-TFT current mirrors with different mirroring ratios. The simulations are carried out using Cadence spectre simulator. In the third phase, simulation results are validated with the measured response from the fabricated circuits. © 2014 IEEE.

2013
c Bernacka-Wojcik, I.a, Lopes Catarina Vaz Veigas Jerzy Wojcik Simoes Barata Fortunato Viana Baptista Águas Martins P. b A. a. "Bio-microfluidic platform for gold nanoprobe based DNA detection-application to Mycobacterium tuberculosis." Biosensors and Bioelectronics. 48 (2013): 87-93. AbstractWebsite

We have projected and fabricated a microfluidic platform for DNA sensing that makes use of an optical colorimetric detection method based on gold nanoparticles. The platform was fabricated using replica moulding technology in PDMS patterned by high-aspect-ratio SU-8 moulds. Biochips of various geometries were tested and evaluated in order to find out the most efficient architecture, and the rational for design, microfabrication and detection performance is presented. The best biochip configuration has been successfully applied to the DNA detection of Mycobacterium tuberculosis using only 3. l on DNA solution (i.e. 90. ng of target DNA), therefore a 20-fold reduction of reagents volume is obtained when compared with the actual state of the art. © 2013 Elsevier B.V.

Lajn, A.a, Von Wenckstern Grundmann Wagner Barquinha Fortunato Martins H. a M. a. "Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films." Journal of Applied Physics. 113 (2013). AbstractWebsite

We demonstrate fully transparent, highly rectifying contacts (TRC) on amorphous GaInZnO and compare them to TRC fabricated on single crystalline bulk ZnO and heteroepitaxial ZnO thin films. The contacts' transparency in the visible spectral range exceeds 70%. From numerical simulations, we conclude that thermionic emission is the dominating transport mechanism, however, for several samples with low net doping density diffusion theory must be applied. The detailed investigation of the rectification properties of the TRC using temperature-dependent current-voltage and capacitance-voltage measurements reveals that barrier inhomogeneities govern the IV-characteristics of all diodes irrespective of the sample crystallinity. Assuming a Gaussian barrier height distribution, the extracted mean barrier heights typically range between 1.1 and 1.3 V. The width of the barrier distribution correlates with the mean barrier height and ranges from 110 to 130 mV. By compiling literature data, we found that this correlation holds also true for Schottky diodes on elemental and III-V semiconductors. © 2013 American Institute of Physics.

Martins, R.M., Pereira Siqueira Salomão Freitas S. V. S. "Curcuminoid content and antioxidant activity in spray dried microparticles containing turmeric extract." Food Research International. 50 (2013): 657-663. AbstractWebsite

Curcuma longa L., also known as turmeric, is widely used as a food colorant and has been reported to have antioxidant, anti-inflammatory, anti-mutagenic and anti-cancer properties. The aim of this study was to evaluate the effects of the spray drying on curcuminoid and curcumin contents, antioxidant activity, process yield, the morphology and solubility of the microparticulated solid dispersion containing curcuma extract using a Box Behnken design. The microparticles were spherical in shape, and an increase in outlet temperature from 40 to 80 °C resulted in a significant increase in the yield of microparticles from 16 to 53%. The total curcuminoid content (17.15 to 19.57. mg/g), curcumin content (3.24 to 4.25. mg/g) and antioxidant activity (530.1 to 860.3 μg/mL) were also affected by the spray drying process. The solubility of curcuminoid from C. longa remarkably improved 100-fold in the microparticles, confirming the potential of the ternary solid dispersion technique to improve the dyeing and nutraceutical properties of these compounds. Furthermore, the microparticles were obtained using the spray drying process, can be easily scaled up. © 2011 Elsevier Ltd.

Nandy, S., Gonçalves Pinto Busani Figueiredo Pereira Paiva Martins Fortunato G. J. V. "Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars." Nanoscale. 5 (2013): 11699-11709. AbstractWebsite

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology. © 2013 The Royal Society of Chemistry.

Martins, R.M., Siqueira MacHado Freitas S. M. O. "The effect of homogenization method on the properties of carbamazepine microparticles prepared by spray congealing." Journal of Microencapsulation. 30 (2013): 692-700. AbstractWebsite

The aim of this study was to investigate the influence of ultrasound and high-shear mixing on the properties of microparticles obtained by spray congealing. Dispersions containing 10% carbamazepine and 90% carrier Gelucire® 50/13 (w/w) were prepared using magnetic stirring, high-shear mixing, or ultrasound. Each preparation was made using hot-melt mixing spray congealing to obtain the microparticles. All microparticles presented a spherical shape with high encapsulation efficiency (>99%). High-shear mixing and ultrasound promoted a decrease in the size of microparticles (D90) to 62.8 ± 4.1 μm and 64.9 ± 3.3 μm, respectively, while magnetic stirring produced microparticles with a size of 84.1 ± 1.4 μm. The use of ultrasound led to microparticles with increased moisture content as identified through sorption isotherm studies. In addition, rheograms showed distinct rheological behaviour among different dispersion preparations. Therefore, the technique used to prepare dispersions for spray congealing can affect specific characteristics of the microparticles and should be controlled during the preparation. © 2013 Informa UK Ltd. All rights reserved.

Wang, J.a, Elamurugu Li Jiao Zhao Martins Fortunato E. b H. a. "Effect of N and P codoping on ZnO properties." Advanced Materials Research. 645 (2013): 64-67. AbstractWebsite

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along <002> direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films. © (2013) Trans Tech Publications, Switzerland.

Golshahi, S.a, Rozati Botelho Do Rego Wang Elangovan Martins Fortunato S. M. b A. "Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films." Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 178 (2013): 103-108. AbstractWebsite

The effect of substrate temperature (Ts) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The Ts was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in Ts. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal Ts. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing Ts until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing Ts. The optical band gap calculated from the absorption edge showed that the films deposited with T s of 300 °C and 350 °C possess higher values than those deposited at higher Ts. © 2012 Elsevier B.V.

Pinto, J.V.a, Branquinho Barquinha Alves Martins Fortunato R. a P. a. "Extended-gate ISFETs based on sputtered amorphous oxides." IEEE/OSA Journal of Display Technology. 9 (2013): 729-734. AbstractWebsite

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, +{\hbox{Ta}}-{2}{\hbox{O}}-{5}{\ hbox{:SiO}}-inf2-inf as the dielectric and +{\hbox{Ta}}-{2}{\hbox{O}}-inf5-inf as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors. © 2005-2012 IEEE.

Fortunato, N.a, Jang Barquinha Nathan Martins J. b P. a. "Foreword." IEEE/OSA Journal of Display Technology. 9 (2013): 687. AbstractWebsite
n/a
deZeaBermudez Alves, R.D.a, Rodrigues Andrade Fernandes Pinto Pereira Pawlicka Martins Fortunato Silva L. C. a J. "GelatinnZn(CF3SO3)2 polymer electrolytes for electrochromic devices." Electroanalysis. 25 (2013): 1483-1490. AbstractWebsite

The present work is focused on gelatin-based electrolytes doped with a range of concentration of zinc triflate (Zn(CF3SO3)2). The transparent-thin-film samples have been represented by the notation GelatinnZn(CF3SO3)2, where n represents the zinc triflate salt concentration in the electrolyte membranes from 0.00 wt% to 10.93 wt% The samples have been characterized by conductivity measurements, thermal analysis, cyclic voltammetry, X-ray diffraction (XRD), polarized optical microscopy (POM) and scanning electron microscopy (SEM). The gelatin-based electrolytes were also tested as ionic conductors in electrochromic devices with the glass/ITO/WO3/gelatin-based electrolyte/CeO2-TiO2/ITO/glass configuration. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bahubalindruni, P.a, Tavares De Oliveira Barquinha Martins Fortunato V. G. a P. "High-gain amplifier with n-type transistors." 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. Abstract

A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions. © 2013 IEEE.

Bahubalindruni, P.a, Tavares Barquinha Martins Fortunato V. G. a P. "High-gain topologies for transparent electronics." IEEE EuroCon 2013. 2013. 2041-2046. Abstract

Transparent TFT technologies, with amorphous semiconductor oxides are lacking a complementary type transistor. This represents a real challenge, when the design of high-gain amplifiers are considered, without resorting to passive resistive elements. However, some solutions do exist to overcome the lack of a p-type transistor. This paper then presents a comparison analysis of two high-gain single-stage amplifier topologies using only n-type enhancement transistors. In these circuits, high gain is achieved using positive feedback for the load impedance. The comparison is carried out in terms of bandwidth, power consumption and complexity under identical bias conditions. Further, the same load impedance is used to develop a novel high-gain multiplier. All the circuits are simulated using a 0.35 μm CMOS technology, as it is easy to test the reliability of the methods, since CMOS transistors have trustworthy models. © 2013 IEEE.