Extended-gate ISFETs based on sputtered amorphous oxides
- Citation:
- Pinto, J.V.a, Branquinho Barquinha Alves Martins Fortunato R. a P. a. "Extended-gate ISFETs based on sputtered amorphous oxides." IEEE/OSA Journal of Display Technology. 9 (2013): 729-734.
Abstract:
We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, +{\hbox{Ta}}-{2}{\hbox{O}}-{5}{\ hbox{:SiO}}-inf2-inf as the dielectric and +{\hbox{Ta}}-{2}{\hbox{O}}-inf5-inf as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors. © 2005-2012 IEEE.
Notes:
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