Rodrigo Martins

The most common techniques used to produce ZnO thin films are the spray pyrolysis and the magnetron sputtering techniques, low and high cost processes respectively. The aim of this work is to compare the properties of the films produced by these two techniques. The predominant difference observed was on the morphological properties. The films produced by spray pyrolysis have a rougher surface than the ones obtained by sputtering. Also the effect of the thermal annealing treatment is much more prononnced for the ZnO thin films produced by spray pyrolysis. After heat treatment films exhibit similar electrical properties and their application to optoelectronic devices is demonstrated.

Thin films of SnO2 deposited by spray pyrolysis as a function of temperature and the carrier gas flow have been produced, in order to evaluate the adequate deposition parameters for application in optoelectronic devices. The characterisation was centred mainly onto the structural, electrical and optical properties of the films. The obtained results showed that the films produced at 450°C and a gas flow of 101/min (as deposited) present an average transmittance (visible spectrum) of 90% and a bulk resistivity of 3.2×10-3 Ωcm.

In this work we present a study of the properties of ZnO thin films produced by spray pyrolysis and r.f. magnetron sputtering. Before the annealing treatment the properties of the films are very similar, which means that the films produced by both techniques could be used on optoelectronic devices. However spray pyrolysis is a more simple and cheap technique than sputtering, but with this last technique the thin films exhibit a higher uniformity. © 2001 Materials Research Society.

In order to study the properties of P-doped ZnO films deposited at low temperature substrates, P-doped ZnO films were RF-sputtered on sapphire substrates in the range from RT to 350°C. XRD spectra indicated the growth of the crystallites along the strongest <001> orientation. Further ZnO (002) peak became the weakest when the film was sputtered at 250°C. AFM pictures showed that the surface morphology varied with the deposition temperature. The sample RMS increased with the increase of substrate temperature. XPS spectra showed a clear broad P 2p peak at about 134 eV. Further the film composition varied with the substrate temperature. The average visible transmittance calculated in the wavelength ranging 400-600 nm was more than 60%. The optical band gap calculated from the absorption coefficient was about 3.2 eV. The Hall measurements confirm the n-type conductivity of the films. The carrier concentration in the films decreases with the increase of substrate temperature. The study is helpful for understanding the properties of P-doped ZnO films sputtered at lower substrate temperature and achieving p type ZnO films at lower temperature.

In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0 W to 200 W while gas flow rate was varied from 15 to 100 sccm keeping rf power at 50 W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from 10-2 to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to 2 cm2/V.s as rf power change from 0 W to 200 W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and μRaman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60 nm.

In this paper, we investigate the optoelectronic properties and the photodegradation of amorphous silicon films produced by the hot wire plasma assisted technique (HWPA-CVD). We observed that hydrogen dilution in the gas phase plays an important role in the time dependence of the photoconductivity, which is correlated with an enhancement of defect density. We also compare the degradation of these films with those produced by plasma enhanced and by hot wire chemical vapour deposition techniques (PECVD and HW-CVD) and we found lower time dependence for the photodegradation of the films produced by HWPA-CVD technique © 2003 Elsevier B.V. All rights reserved.

In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 Å/s, ημτ product of 1.6 × 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 × 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 °C, hydrogen dilution of 99%, filament temperature of 1700 °C, and rf power of 100 W. © 2002 Elsevier Science B.V. All rights reserved.

The aim of this paper is to present results concerning the morphology, structure, mechanical and electrical characteristics of the new proposed Cu-Sn metallurgical alloy, which may be used in electronic joins. By proper choice of process temperature and pressure, Cu coated surfaces are soldered using Sn as pre-form. The main results achieved indicate that the formation of Cu3Sn phase begins at a temperature of about 473 K and that the Sn thickness (dSn) needed is slightly above 7 μm. Due to join wettability, higher temperatures (between 523 and 573 K) and dSn above 35 μm are required to form joins within the specifications of the electronic industry.

The room temperature ozone sensing properties of polycrystalline undoped zinc oxide (ZnO) thin films have been investigated. ZnO thin films have been produced by the d.c. and r.f. magnetron sputtering technique as well as with spray pyrolysis with a variety of parameters. The as-grown films were brought to a high conducting state through a reversible photoreduction process by UV light exposure and were subsequently exposed to ozone resulting in a strong resistivity increase caused by re-oxidation. The magnitude of the effect was largest for the sputtered films, which exhibited resistivity changes of more than 8 orders of magnitude, whereas films deposited by spray pyrolysis showed changes of less than 3 orders of magnitude. XRD and AFM analysis of the films revealed that all films were microcrystalline. The film texture, however, was strongly related to the growth technique and the parameters used. Best results were achieved with r.f.-sputtered films, which have been deposited at high total pressures. These films exhibited a sensor response of 1.2 × 108. © 2002 Elsevier Science B.V. All rights reserved.

Flexible large area thin film position sensitive detectors based on amorphous silicon technology were prepared on polyimide substrates using the conventional plasma enhanced chemical vapor deposition technique. The sensors were characterized by spectral response, illuminated I-V characteristics position detectability measurements and atomic force microscopy. The obtained one-dimensional position sensors, 5-mm wide and 60-mm long, presented a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a S.D. of 1×10-2, comparable to those produced on glass substrates.

In this work Laponite was combined with a modified abundant natural polymer, (caboxymethyl cellulose), acrylic sodium salt polymer and lithium perchlorate aiming to produce inexpensive and sustainable nanocomposite electrolytes for functional electrochemical devices. Optical, electrochemical, structural, morphological and rheological characterization was performed in order to evaluate their properties and potential advantages as electrolyte. It was verified that the addition of Laponite led to an ionic conductivity at room temperature (25 C) in the range of 6 to 9 × 10- 5 Scm - 1 this value being then determined by the composition of the nanocomposite. These electrolytes were applied to electrochromic devices using evaporated nickel oxide thin film as the electrochromic layer. The devices exhibited a significant transmittance modulation that exceeds 45 % at 600 nm. © 2013 Elsevier B.V.

Thin films of molybdenum-doped indium oxide (IMO) were prepared by a 3-source, cylindrical radio-frequency magnetron sputtering at room temperature. The films were post-annealed and were characterized by their structural (X-ray diffraction) and optical (UV-VIS-NIR spectrophotometer) properties. The films were studied as a function of oxygen volume percentage (O2 vol.%) ranging from 3.5 to 17.5. The structural studies revealed that the as-deposited amorphous films become crystalline on annealing. In most cases, the (222) reflection emerged as high intensive peak. The poor visible transmittance of the films as-deposited without oxygen was increased from ∼ 12% to over 80% on introducing oxygen (3.5 O2 vol.%). For the films annealed in open air, the average visible transmittance in the wavelength ranging 400-800 nm was varied between 77 and 84%. The films annealed at high temperatures (> 300 °C) decreased the transmittance to as low as < 1%. The optical band gap of the as-deposited films increased from the range 3.83-3.90 to 3.85-3.98 eV on annealing at different conditions. © 2007 Elsevier B.V. All rights reserved.

The driving force behind the work herein presented is the importance of budgeting in a competitive market. The problem at hands is the creation of a budgeting methodology for reverse engineering applications, involving laser scanning, that has the ability to generate budgets for different customer accuracy requirements and for parts of different morphologic characteristics, such as: shape, dimension and/or detail complexity. A breakup approach was used to implement the methodology: the reverse engineering process was broken in nine basic identified steps and elementary sources of cost were defined at the different reverse engineering stages as well. Particular budgeting methodologies for each step of the process were created. The obtained results so far point to the possibility of creating a complete budgeting system based on the proposed methodology. © 2008 Taylor & Francis Group.

In this paper we report on the fabrication and performance of a portable and low cost optoelectronic platform integrating a double color tuned light emitting diode as light source, an amorphous/nanocrystalline silicon photodetector with a flat spectral response in the wavelength range from 520. nm to 630. nm and integrated electronic for signal acquisition and conditioning constituted by current to voltage converter, a filter and an amplification stage, followed by an analog to digital converter, with appropriate software for full automation to minimize human error. Incorporation of the double color tuned light emitting diode provides for a simple yet innovative solution to signal acquisition independently from the light intensity and/or solution concentration, while considerably decreasing production costs. Detection based on Au-nanoprobes constitutes the biorecognition step and allowed identification of specific sequences of Mycobacterium tuberculosis complex, namely Mycobacterium bovis and M. tuberculosis in biological samples. © 2010 Elsevier B.V.

The performances of amorphous and nano-crystalline porous silicon thin films as gas detector are pioneer reported in this work. The films were produced by the hot wire chemical vapour deposition (HW-CVD). These films present a porous like-structure, which is due to the uncompensated bonds and oxidise easily in the presence of air. This behaviour is a problem when the films are used for solar cells or thin film transistors. For as gas detectors, the oxidation is a benefit, since the CO, H2 or O2 molecules replace the OH adsorbed group. In the present study we observe the behaviour of amorphous and nano-crystalline porous silicon thin films under the presence of ethanol, at room temperature. The data obtained reveal a change in the current values recorded by more than three orders of magnitude, depending on the film preparation condition. This current behaviour is due to the adsorption of the OH chemical group by the Si uncompensated bonds as can be observed in the infrared spectra. Besides that, the current response and its recover time are done in few seconds.

This work reports the use of undoped porous amorphous/nanocrystalline hydrogenated silicon (a/nc-Si:H) thin films produced by hot wire chemical vapour deposition (HW-CVD) as ethanol detector above 50ppm and as a primary fuel cell where a power of 4μW/cm2 was obtained in structures of the type glass/ITO/i-a-nc-Si:H/Al. The porous silicon looks like a sponge constituted by grains and cluster of grains that determines the type of surface morphology and the behaviour of the structure under the presence of vapour moisture. Apart from that, the detector/device performances will also depend on the type of interlayer and interfaces with the metal contacts. The sponge like structure adsorbs the OH groups in uncompensated bonds, which behave as donor-like carriers, leading to an increase in the current flowing through the material, directly dependent on the ethanol vapour pressure. The corresponding role of the components of the microstructure on this detector was investigated by spectroscopic impedance. The response time of the current of the sensor and its recovery time are in the range of 10-50s at room temperature. © 2004 Elsevier B.V. All rights reserved.

This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 × 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production. © 2002 Elsevier Science B.V. All rights reserved.

The authors report on the performance of polymer-based light-emitting diodes, LEDs, using amorphous zinc oxide-doped indium oxide, IZO, as anode. In particular, LEDs with poly[(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] as electroluminescent layer and aluminium cathodes, show higher efficiency with this IZO anode (0.015 cd/A) than with indium-tin oxide (ITO) (0.010 cd/A). Inspite of the higher resistance of this IZO electrode, compared with ITO, the fact that it can be processed at lower temperatures and allows similar or even higher efficiency values for polymer LEDs make this material a good candidate for display and other optoelectronic applications. © 2009 Elsevier B.V. All rights reserved.

The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells. © 2003 Elsevier B.V. All rights reserved.

The aim of this paper is to study the role of gold (Au) induced crystallization on amorphous silicon (a-Si) films produced by low pressure chemical vapor deposition (LPCVD) at low process temperatures (550 °C) to allow the use of glass substrates. Concerning the crystallization process Au was deposited by e-beam thermal evaporation over the silicon (Si), using different metal thickness, from 5 to 100 Å. The samples were then annealed at 450, 500 and 550 °C and the crystallization time was changed from 5 up to 30 h. The structure of the films was analyzed by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) while electrical conductivity measurements were performed to obtain the electrical properties of the films produced, namely the activation energy (EA) and how it changes with the Au thickness used. The data achieved show that the increase of the metal layer thickness decreases the time needed to get full crystallization. However this leads to lower conduction activation energy (EA) meaning that there is also an increase of Au incorporation that leads to the production of doped films. © 2004 Elsevier B.V. All rights reserved.

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. © 2005 Elsevier B.V. All rights reserved.