Properties of P-doped ZnO films RF-sputtered at different substrate temperature
- Citation:
- Wang, J.a b, Li Sallet Rego Martins Fortunato M. a V. c. "Properties of P-doped ZnO films RF-sputtered at different substrate temperature." Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering. 40 (2011): 1490-1494.
Abstract:
In order to study the properties of P-doped ZnO films deposited at low temperature substrates, P-doped ZnO films were RF-sputtered on sapphire substrates in the range from RT to 350°C. XRD spectra indicated the growth of the crystallites along the strongest <001> orientation. Further ZnO (002) peak became the weakest when the film was sputtered at 250°C. AFM pictures showed that the surface morphology varied with the deposition temperature. The sample RMS increased with the increase of substrate temperature. XPS spectra showed a clear broad P 2p peak at about 134 eV. Further the film composition varied with the substrate temperature. The average visible transmittance calculated in the wavelength ranging 400-600 nm was more than 60%. The optical band gap calculated from the absorption coefficient was about 3.2 eV. The Hall measurements confirm the n-type conductivity of the films. The carrier concentration in the films decreases with the increase of substrate temperature. The study is helpful for understanding the properties of P-doped ZnO films sputtered at lower substrate temperature and achieving p type ZnO films at lower temperature.
Notes:
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