Polymorphous silicon films deposited at 27.12 MHz
- Citation:
- Martins, R.a, Águas Ferreira Fortunato Lebib Cabarrocas Guimarães H. a I. a. "Polymorphous silicon films deposited at 27.12 MHz." Chemical Vapor Deposition. 9 (2003): 333-337.
Abstract:
This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.
Notes:
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