The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique
- Citation:
- Ferreira, I.a, Fortunato Pereira Costa Martins E. a L. a. "The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique." Journal of Non-Crystalline Solids. 299-302 (2002): 30-35.
Abstract:
In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 Å/s, ημτ product of 1.6 × 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 × 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 °C, hydrogen dilution of 99%, filament temperature of 1700 °C, and rf power of 100 W. © 2002 Elsevier Science B.V. All rights reserved.
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