Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices
- Citation:
- Pimentel, A., Fortunato Gonçalves Marques Águas Pereira Ferreira Martins E. A. A. "Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices." Thin Solid Films. 487 (2005): 212-215.
Abstract:
In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. © 2005 Elsevier B.V. All rights reserved.
Notes:
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