Martins, Rodrigo, Lavareda Guilherme Fortunato Elvira Soares Fernando Fernandes Luis Ferreira Luis. "
Linear thin-film position-sensitive detector (LTFPSD) for 3D measurements."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2415. 1995. 148-158.
AbstractA linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).
Martins, R., Macarico Ferreira Fortunato A. I. E. "
Role of the gas flow parameters on the uniformity of films produced by PECVD technique."
Materials Research Society Symposium - Proceedings. Vol. 467. 1997. 609-614.
AbstractThe aim of this work is to present an analytical model able to interpret the experimental data of the dependence of film's uniformity on the discharge pressure, gas flow and temperature used during the production of thin films by the plasma enhancement chemical vapour deposition technique, under optimised electrode's geometry and electric field distribution. To do so, the gas flow is considered to be quasi-incompressible and inviscous leading to the establishment of the electro-fluid-mechanics equations able to interpret the film's uniformity over the substrate area, when the discharge process takes place in the low power regime.