Highly conductive and highly transparent n-type microcrystalline silicon thin films
- Citation:
- Martins, R., Maçarico Ferreira Nunes Bicho Fortunato A. I. R. "Highly conductive and highly transparent n-type microcrystalline silicon thin films." Thin Solid Films. 303 (1997): 47-52.
Abstract:
The aim of this paper is to present data on the dependence of the electro-optical characteristics and structure of n-type microcrystalline silicon films on the r.f. power used during the deposition of films produced by the plasma-enhanced chemical vapour deposition technique. The interest of these films arise from the fact that they combine some electro-optical advantages of amorphous (wide optical gap) and crystalline materials (electronic behaviour), highly interesting in the production of a wide variety of optoelectronic devices such as solar cells and thin film transistors. In this paper, microcrystalline n-type films presenting simultaneously optical gaps of about 2.3 eV, dark conductivity of 6.5 S cm-1 and Hall mobility of about 0.86 cm2 V-1 s-1 will be reported, the highest combined values for n-type microcrystalline silicon films, as far as we know. © 1997 Elsevier Science S.A.
Notes:
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