Complementary metal oxide semiconductor technology with and on paper
- Citation:
- Martins, R.a, Nathan Barros Pereira Barquinha Correia Costa Ahnood Ferreira Fortunato A. b R. a. "Complementary metal oxide semiconductor technology with and on paper." Advanced Materials. 23 (2011): 4491-4496.
Abstract:
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnO x) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Notes:
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