Nanostructured silicon and its application to solar cells, position sensors and thin film transistors
- Citation:
- c Martins, R.a, Raniero Pereira Costa Aguas Pereira Silva Goncalves Ferreira Fortunato L. b L. a. "Nanostructured silicon and its application to solar cells, position sensors and thin film transistors." Philosophical Magazine. 89 (2009): 2699-2721.
Abstract:
This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 90 l p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm 2/V/s, threshold voltage of 2 V, on/off ratio larger than 10 7 and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device. © 2009 Taylor & Francis.
Notes:
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