Fantoni, A., Vieira Martins M. R. "
Bidimensional numerical analysis of a μc-Si:H P-I-N photodiode under local illumination."
Materials Research Society Symposium - Proceedings. Vol. 467. 1997. 765-770.
AbstractThe behaviour of a microcrystalline p-i-n junction locally illuminated with monochromatic radiation (incident power of 50 mW/cm2) is analysed by means of numerical experiences. The model used for the two-dimensional analysis of the transport properties of a μc-Si:H p-i-n photo-detector is based on the simultaneous solution of the continuity equations for holes and electrons together with the Poisson's equation. The solution is found on a rectangular domain, taking into account the dimension perpendicular to the junction plane and one on the parallel plane. The lateral effects occurring within the structure, due to the non-uniformity of the illumination, are outlined. The results we present show that the potential profile has a linear variation from the illuminated to the dark neutral region. The lateral components of the electric field and of the current density vectors reveal to be mainly localised inside the doped layers.
Fantoni, A., Vieira Cruz Martins M. J. R. "
Numerical simulation of a/μc-Si:H p-i-n photo-diode under non-uniform illumination: A 2D transport problem."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2997. 1997. 234-243.
AbstractWe report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/μc-Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p-i-n μc-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation. ©2004 Copyright SPIE - The International Society for Optical Engineering.
Fantoni, A., Vieira Martins M. R. "
Modelling heteroface of P.I.N solar cells for improving stability."
Materials Research Society Symposium Proceedings. Vol. 336. 1994. 711-716.
AbstractThe introduction into a traditional p.i.n structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer ("i′-layer"), grown at a higher power density, present a high density of defects and acts as "gettering centers" able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyse the influence of the "i′-layer" position, thickness and density of states on the a-Si: H solar cells performances. Results of some systematic simulation from the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented. © 1994 Materials Research Society.
Fantoni, Alessandro, Vieira Manuela Martins Rodrigo. "
Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2397. 1995. 695-702.
AbstractThe introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i- layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.
Fernandes, M.a, Vieira Martins M. a R. b. "
Modeling the laser scanned photodiode S-shaped J-V characteristic."
Materials Research Society Symposium Proceedings. Vol. 989. 2007. 469-474.
AbstractThe devices analyzed in this work present an S-shape J-V characteristic when illuminated. By changing the light flux a non linear dependence of the photocurrent with illumination is observed. Thus a low intensity light beam can be used to probe the local illumination conditions, since a relationship exists between the probe beam photocurrent and the steady state illumination. Numerical simulation studies showed that the origin of this S-shape lies in a reduced electric field across the intrinsic region, which causes an increase in the recombination losses. Based on this, we present a model for the device consisting of a modulated barrier recombination junction in addition to the p-i-n junction. The simulated results are in good agreement with the experimental data. Using the presented model a good estimative of the LSP signal under different illumination conditions can be obtained, thus simplifying the development of applications using the LSP as an image sensor, with advantages over the existing imaging systems in the large area sensor fields with the low cost associated to the amorphous silicon technology. © 2007 Materials Research Society.
Ferreira, I., Vilarinho Fernandes Fortunato Martins P. F. E. "
Influence of hydrogen gas dilution on the properties of silicon-doped thin films prepared by the hot-wire plasma-assisted technique."
Key Engineering Materials. 230-232 (2002): 591-594.
AbstractP- and n-type silicon thin films have been produced using a new hot wire plasma assisted deposition process that combines the conventional plasma enhanced chemical vapor deposition and the hot wire techniques. The films were produced in the presence of different hydrogen gas flow and their optoelectronic, structural and compositional properties have been studied. The optimized optoelectronic results achieved for n-type Si:H films are conductivity at room temperature of 9.4(Ωcm)-1 and optical band gap of 2eV while for p-type SiC:H films these values are 1 × 10-2(Ωcm)-1 and 1.6eV, respectively. The films exhibit the required optoelectronic characteristics and compactness for device applications such as solar cells.
Ferreira, I.M.M., Martins Cabrita Fortunato Vilarinho R. F. P. A. "
Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique."
Materials Research Society Symposium - Proceedings. Vol. 609. 2000. A2241-A2246.
AbstractIn this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.
Ferreira, I., Águas Pereira Fortunato Martins H. L. E. "
Properties of a-Si:H intrinsic films produced by HWPA-CVD technique."
Thin Solid Films. 451-452 (2004): 366-369.
AbstractIn this paper, we investigate the optoelectronic properties and the photodegradation of amorphous silicon films produced by the hot wire plasma assisted technique (HWPA-CVD). We observed that hydrogen dilution in the gas phase plays an important role in the time dependence of the photoconductivity, which is correlated with an enhancement of defect density. We also compare the degradation of these films with those produced by plasma enhanced and by hot wire chemical vapour deposition techniques (PECVD and HW-CVD) and we found lower time dependence for the photodegradation of the films produced by HWPA-CVD technique © 2003 Elsevier B.V. All rights reserved.