Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique
- Citation:
- Ferreira, I.M.M., Martins Cabrita Fortunato Vilarinho R. F. P. A. "Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique." Materials Research Society Symposium - Proceedings. Vol. 609. 2000. A2241-A2246.
Abstract:
In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.
Notes:
cited By 1
Recent Publications
