Rodrigo Martins

Citation:

Fantoni, A.a b, Viera Martins M. a R. b. "Influence of the intrinsic layer characteristics on a-Si:H p-i-n solar cell performance analysed by means of a computer simulation." Solar Energy Materials and Solar Cells. 73 (2002): 151-162.

Abstract:

In this paper a set of one-dimensional simulations of a-Si:H p-i-n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift-diffusion and the generation-recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy. © 2002 Elsevier Science B.V. All rights reserved.

Notes:

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