Rodrigo Martins

Citation:

Fantoni, A., Vieira Martins M. R. "Modelling heteroface of P.I.N solar cells for improving stability." Materials Research Society Symposium Proceedings. Vol. 336. 1994. 711-716.

Abstract:

The introduction into a traditional p.i.n structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer ("i′-layer"), grown at a higher power density, present a high density of defects and acts as "gettering centers" able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyse the influence of the "i′-layer" position, thickness and density of states on the a-Si: H solar cells performances. Results of some systematic simulation from the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented. © 1994 Materials Research Society.

Notes:

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