Simulation of hydrogenated amorphous and microcrystalline silicon optoelectronic devices

Citation:
Fantoni, A.a, Vieira Martins M. b R. a. "Simulation of hydrogenated amorphous and microcrystalline silicon optoelectronic devices." Mathematics and Computers in Simulation. 49 (1999): 381-401.

Abstract:

This paper is concerned with the modelling and simulation of amorphous and microcrystalline silicon optoelectronic devices. The physical model and its mathematical formulation are extensively described. Its numerical reduction is also discussed together with the presentation of a computer program dedicated to the simulation of the electrical behaviour of such devices. This computer program, called ASCA (Amorphous Silicon Solar Cells Analysis), is capable of simulating, on one- and two-dimensional domains, the internal electrical behaviour of multi-layer structures, homojunctions and heterojunctions under simple or complex spectra illumination and externally applied biases. The applications of the simulator presented in this work are the analysis of μc/a-Si:H p-i-n photovoltaic cell in thermal equilibrium and illuminated by monochromatic light and the AMI.5 solar spectrum, with and without polarisation. We also study the appearance within the device of lateral components of the electric field and current density vectors when the illumination is not uniform. © 1999 IMACS/Elsevier Science B.V. All rights reserved.

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