Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films
- Citation:
- Ferreira, I., Águas Mendes Martins H. L. R. "Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films." Applied Surface Science. 144-145 (1999): 690-696.
Abstract:
Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200°C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film's structure, composition, morphology and transport properties. The film's structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000°C and hydrogen dilution 87%, to values above 2100°C and hydrogen dilution 90%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm. © 1999 Elsevier Science B.V. All rights reserved.
Notes:
cited By 7
Recent Publications
