Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films
- Citation:
- Ferreira, I.a, Fortunato Martins Vilarinho E. a R. a. "Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films." Journal of Applied Physics. 91 (2002): 1644-1649.
Abstract:
We have produced amorphous intrinsic silicon thin films by hot-wire plasma assisted chemical vapor deposition, a process that combines the traditional rf plasma and the recent hot-wire techniques. In this work we have studied the influence of hydrogen gas dilution and rf power on the surface morphology, composition, structure and electro-optical properties of these films. The results show that by using this deposition technique it is possible to obtain at moderate rf power and filament temperature, compact i-type silicon films with ημτ of the order of 10 -5cm 2V -1, without hydrogen dilution. © 2002 American Institute of Physics.
Notes:
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