Morphology and structure of nanocrystalline p-doped silicon films produced by hot wire technique
- Citation:
- Ferreira, I., Cabrita Braz Fernandes Fortunato Martins A. F. E. "Morphology and structure of nanocrystalline p-doped silicon films produced by hot wire technique." Vacuum. 64 (2002): 237-243.
Abstract:
In this paper we report results of nanocrystalline p-doped silicon films produced by hot wire chemical vapour deposition technique with Ta filaments, using a pre-mixed gas containing silane, diborane, methane, helium and hydrogen. The data obtained show that the films produced exhibit good optoelectronic properties and show a surface morphology dependent on the filament temperature and hydrogen dilution. The increase in the filament temperature, keeping constant the hydrogen dilution (87%), promotes the preferential growth of the crystals in the {220} direction, giving rise to a pyramidal-like surface structure. This behaviour is observed by the SEM micrographs as well as by the micro-Raman and X-ray diffraction analyses. On the other hand, using a constant filament temperature, the increase in the hydrogen dilution contributes to an increase in both {111} and {220} diffraction peaks. Thus, by combining both filament temperature and hydrogen dilution the film surface can be controlled from a smooth to a pyramidal-like structure, without decreasing the crystalline fraction of the films. The structure and morphology is also reflected in the stability of the electrical dark conductivity. We observe that this property depends on the temperature range of the measurements and on the exposition time of films to the atmospheric conditions. © 2002 Elsevier Science Ltd. All rights reserved.
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