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Undoped and doped (indium and aluminium) zinc oxide (ZnO) thin films have been prepared by spray pyrolysis, and the effect of the doping and annealing atmosphere on the electrical, optical and structural properties of the produced films has been investigated. The deposited films have a high resistivity. Annealing the films in an argon atmosphere or under vacuum leads to a substantial reduction of the electrical resistivity of the films and to an increase on the degree of cristallinity of the deposited material. The most pronounced changes were observed in the films annealed in Argon. The results also indicate that doping highly influences the electrical and structural properties of the films, which is more pronounced in the films doped with Indium. © 1998 Elsevier Science Ltd. All rights reserved.

This work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100 °C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200 °C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10-1 S/cm to 10-3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.

We consider the Banach algebra \(\mathfrak{A}\) of singular integral operators with matrix piecewise continuous coefficients in the reflexive Orlicz space \(L_M^n(\Gamma)\). We assume that \(\Gamma\) belongs to a certain wide subclass of the class of Carleson curves; this subclass includes curves with cusps, as well as curves of the logarithmic spiral type. We obtain an index formula for an arbitrary operator from the algebra \(\mathfrak{A}\) in terms of the symbol of this operator.

Most known teaching experiences focus on parallel computing courses only, but some teaching experiences on distributed computing courses have also been reported. In this paper we describe a course on Parallel and Distributed Processing that is taught at undergraduate level in the Computer Science degree of our University.This course presents an integrated approach concerning concurrency, parallelism, and distribution issues. It’s a breadth-first course addressing a wide spectrum of abstractions: the theoretical component focus on the fundamental abstractions to model concurrent systems, including process cooperation schemes, concurrent programming models, data and control distribution, concurrency control and recovery in transactional systems, and parallel processing models; the practical component illustrates the design and implementation issues involved in selected topics such as a data and control distribution problem, a distributed transaction-based support system and a parallel algorithm.We also discuss how this approach has been contributing to prepare the student to further actions regarding research and development of concurrent, distributed, or parallel systems.

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Most known teaching experiences focus on parallel computing courses only, but some teaching experiences on distributed computing courses have also been reported. In this paper we describe a course on Parallel and Distributed Processing that is taught at undergraduate level in the Computer Science degree of our University.This course presents an integrated approach concerning concurrency, parallelism, and distribution issues. It's a breadth-first course addressing a wide spectrum of abstractions: the theoretical component focus on the fundamental abstractions to model concurrent systems, including process cooperation schemes, concurrent programming models, data and control distribution, concurrency control and recovery in transactional systems, and parallel processing models; the practical component illustrates the design and implementation issues involved in selected topics such as a data and control distribution problem, a distributed transaction-based support system and a parallel algorithm.We also discuss how this approach has been contributing to prepare the student to further actions regarding research and development of concurrent, distributed, or parallel systems.

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We have deposited by Plasma Enhanced Chemical Vapour Deposition phosphorus doped amorphous and microcrystalline silicon films, as a function of the RF power (10-300 W), using a PH3/(SiH4 + H2 + He)mixture. It was found that films microcrystallization occurs for powers above 130 W, where a clear phase transition occurs. The microcrystalline films produced present high dark conductivities and optical band gaps, where the crystalline volume fraction is above 25%, as revealed by micro Raman spectroscopy. The Hall mobility have been also determined for amorphous and microcrystalline films, as a function of temperature, in the range 280-340 K. The data show that for the microcrystalline films the conduction is mainly in the extended states of the microcrystals, confirming also the double sign anomaly. That is, for n-type films, the sign is positive for the amorphous case while it is negative for the microcrystalline case. © 1998 Elsevier Science S.A.

To achieve a certain degree of confidence that a given program follows its specification, a testing phase must be included in the program development process, and also a complementary debugging phase to help locating the program's bugs. This paper presents an environment which results of the composition and integration of two basic tools: STEPS (Structural TEsting of Parallel Software), which is a testing tool, and DDBG (Distributed DeBuGger), which is a debugging tool. The two tools are presented individually as stand-alone tools, and we describe how they were combined through the use of another intermediate tool: DEIPA (Deterministic re-Execution and Interactive Program Analysis). We claim that the result achieved is a very effective testing and debugging environment.

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To achieve a certain degree of confidence that a given program follows its specification, a testing phase must be included in the program development process, and also a complementary debugging phase to help locating the program’s bugs. This paper presents an environment which results of the composition and integration of two basic tools: STEPS (Structural TEsting of Parallel Software), which is a testing tool, and DDBG (Distributed DeBuGger), which is a debugging tool. The two tools are presented individually as stand-alone tools, and we describe how they were combined through the use of another intermediate tool: DEIPA (Deterministic re-Execution and Interactive Program Analysis). We claim that the result achieved is a very effective testing and debugging environment.

In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

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The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.