We prove criteria for the invertibility of the binomial functional operator
\[
A=aI-bW_\alpha
\]
in the Lebesgue spaces \(L^p(0,1)\), \( 1 < p < \infty\), where \(a\) and \(b\) are continuous functions on \((0,1)\), \(I\) is the identity operator, \(W_\alpha\) is the shift operator, \(W_\alpha f=f\circ\alpha\), generated by a non-Carleman shift \(\alpha:[0,1]\to[0,1]\) which has only two fixed points \(0\) and \(1\). We suppose that \(\log\alpha'\) is bounded and continuous on \((0,1)\) and that \(a,b,\alpha'\) slowly oscillate at \(0\) and \(1\). The main difficulty connected with slow oscillation is overcome by using the method of limit operators.

Highly conducting and transparent gallium doped zinc oxide thin films have been deposited at high growth rates by r.f. magnetron sputtering at room temperature on inexpensive soda lime glass substrates. The argon sputtering pressure was varied between 0.15 and 2.1 Pa. The lowest resistivity was 2.6 × 10-4 Ω cm (sheet resistance ≈6 Ω/sq. for a thickness ≈600 nm) and was obtained at an argon sputtering pressure of 0.15 Pa and a r.f. power of 175 W. The films present an overall transmittance in the visible spectra of approximately 90%. The increase on the resistivity for higher sputtering pressures is due to a decrease of both, mobility and carrier concentration, and is associated to a change on the surface morphology. The low resistivity, accomplished with a high growth rate (290 Å/min) and with a room temperature deposition enables these films deposition onto polymeric substrates for flexible optoelectronic devices. © 2002 Elsevier Science B.V. All rights reserved.

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We prove the inverse closedness of the Banach algebra \(\mathfrak{A}_p\) of functional operators with non-Carleman shifts, which have only two fixed points, in the Banach algebra of all bounded linear operators on \(L^p\). We suppose that \(1 \le p \le \infty\) and the generators of the algebra \(\mathfrak{A}_p\) have essentially bounded data. An invertibility criterion for functional operators in \(\mathfrak{A}_p\) is obtained in terms of
the invertibility of a family of discrete operators on \(l^p\). An effective invertibility criterion is established for binomial difference operators with \(l^\infty\) coefficients on the spaces \(l^p\). Using the reduction to binomial difference operators, we give effective criteria of invertibility for binomial functional operators on the spaces \(L^p\).

The resulting economic integration of industrial processes and manufacturing internationalisation lead several authors to argue that world economy is globalised. In this context, the approach to the divestment concept without an social and económical context, does not show a group of associated practices and representations. Choices and options are motivated by exogenous forces that pushes companies to determine strategies that stop capital investment on new equipment goods, or on other imaterial goods. This type of strategy is designated by "divestment". The social level of consequencies are not due to the closing down or de-localization of production units that are divesting, but can be materialised of efects that are irreversible. This means unemployment, de-skilling, labour precarization and even emergence of new forms of social exclusion in former industrialised regions.

In this work we show that it is possible to control the plasma regime in the region close to the substrate in r.f. silane discharges. The PECVD reactor works in a modified triode configuration, where the control over the plasma regime is performed by polarising a grid electrode, placed close to the r.f. electrode, with a DC power source. Besides that, the DC grid allows also to control the energy of the ion bombardment, because the plasma potential will be a function of the voltage (Vpol) applied to the DC grid. The silane plasma was characterised with a Langmuir probe and an impedance probe. We were able to identify three plasma regimes in the region close to the substrate: γ′ regime for Vpol<0 V; γ′-α regime for 0 V<Vpol<40 V; and α regime for Vpol40 V. The γ′ regime is associated with a high concentration of dust particles in plasma and high electron energy (≈8eV), while the α regime is associated with a free dust plasma and low electron energy (≈2eV). The intermediate regime, γ′-α, is characterised by the presence of smaller particles (≈2-5nm) that can be beneficial for the film's properties. © 2002 Elsevier Science Ltd. All rights reserved.

P- and n-type silicon thin films have been produced using a new hot wire plasma assisted deposition process that combines the conventional plasma enhanced chemical vapor deposition and the hot wire techniques. The films were produced in the presence of different hydrogen gas flow and their optoelectronic, structural and compositional properties have been studied. The optimized optoelectronic results achieved for n-type Si:H films are conductivity at room temperature of 9.4(Ωcm)-1 and optical band gap of 2eV while for p-type SiC:H films these values are 1 × 10-2(Ωcm)-1 and 1.6eV, respectively. The films exhibit the required optoelectronic characteristics and compactness for device applications such as solar cells.

In this paper a set of one-dimensional simulations of a-Si:H p-i-n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift-diffusion and the generation-recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy. © 2002 Elsevier Science B.V. All rights reserved.

In this work we show that it is possible to control the plasma species present near the substrate surface, from what is usually associated with an α regime (a plasma free of particles) to a γ' regime (a plasma where particles are present) and simultaneously control the energy of the ions striking the substrate during a-Si:H deposition from a silane glow discharge in a modified triode (MT) type PECVD reactor, where a DC mesh electrode biased with Vpol is located in front of the r.f electrode. The presence of large particles in the plasma leads to the deposition of the films with the poorest optoelectronic properties. When the particle size in the plasma decrease the film properties improve, but, when particles are no longer present in the plasma region close to the substrate, like in a α like regime, the properties of the films deteriorate again. The results show that the best transport properties are achieved for the films deposited in the α-γ' transition regime corresponding to 0V<Vpol<51V. Under this condition the films present a dark conductivity, σ d ≈ 10-11 (Ωcm)-1, photosensitivity, S ≈ 107, activation energy, ΔE ≈ 0.9 eV, hydrogen content, CH ≈ 10%, factor of microstructure, R ≈ 0.085 and an optical gap, Eop ≈ 1.77 eV.

Tensile tests were performed on PET films coated with Al doped zinc oxide films by RF magnetron sputtering. During the tensile elongation, the electrical resistance of the oxide was evaluated in situ. The results indicate that the increase in the electrical resistance is related to the crack debsity and crack width, which also depends on the film thickness.

Thin films of low density polyethylene (LDPE) and crosslinked polyethylene (XLPE) were aged under an AC electric field while kept in sodium chloride aqueous solution. After aging the samples showed water trees (localized damaged with the appearance of hydrophilic ramified structures whose size ranges from a few microns to I mm). Some of the samples suffered dielectric breakdown showing small channels (1-2 mm. diameter) crossing the film and sometimes also signs of carbonization. In order to identify the oxidation mechanisms contributing to aging, FTIR was used to analyze both unaged and aged specimens. Comparing between unaged and aged LDPE an increase in the FTIR spectrum for bands at 1720 cm(-1), 1640 cm(-1) and 1590 cm(-1) was visible for the aged samples. The first region corresponds to carbonyl groups (C=O bonds) resulting from oxidation (most probably ketones). While the second one is related to carbon double bonds formed due to chain scission. Finally the third one is due to carboxylates. For the XLPE the analysis is more difficult. Besides aging it needs to be taken into account the by-products of crosslinking that will tend also to diffuse out with time. The main effect of aging is an increase in the concentration of 1640 cm(-1) band (C=C bonds). For the water treed regions dry and wet samples were compared. In the wet ones the absorbance is larger for the 3380 cm(-1) exhibiting, as expected, water absorption in the water treed regions (hydrophilic characteristics were increased).