Improved a-Si:H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics
- Citation:
- Lavareda, G., Fortunato Carvalho C.Nunes Martins E. R. "Improved a-Si:H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics." Materials Research Society Symposium - Proceedings. Vol. 424. 1996. 59-64.
Abstract:
In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.
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