Investigation of the amorphous to microcrystalline phase transition of thin film silicon produced by PECVD
- Citation:
- b b b b b Martins, R.a b, Maçarico Ferreira Nunes Bicho Fortunato A. a I. a. "Investigation of the amorphous to microcrystalline phase transition of thin film silicon produced by PECVD." Thin Solid Films. 317 (1998): 144-148.
Abstract:
We have deposited by Plasma Enhanced Chemical Vapour Deposition phosphorus doped amorphous and microcrystalline silicon films, as a function of the RF power (10-300 W), using a PH3/(SiH4 + H2 + He)mixture. It was found that films microcrystallization occurs for powers above 130 W, where a clear phase transition occurs. The microcrystalline films produced present high dark conductivities and optical band gaps, where the crystalline volume fraction is above 25%, as revealed by micro Raman spectroscopy. The Hall mobility have been also determined for amorphous and microcrystalline films, as a function of temperature, in the range 280-340 K. The data show that for the microcrystalline films the conduction is mainly in the extended states of the microcrystals, confirming also the double sign anomaly. That is, for n-type films, the sign is positive for the amorphous case while it is negative for the microcrystalline case. © 1998 Elsevier Science S.A.
Notes:
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