Influence of the H 2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique | Hugo Águas

Influence of the H 2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique

Citation:: Ferreira, I., H. Águas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins. "Influence of the H 2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique." MRS Proceedings. Vol. 507. Cambridge University Press, 1998. 831.

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