Influence of the H2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
- Citation:
- Ferreira, I., Aguas Mendes Fernandes Fortunato Martins H. L. F. "Influence of the H2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique." Materials Research Society Symposium - Proceedings. Vol. 507. 1999. 831-836.
Abstract:
This work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100 °C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200 °C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10-1 S/cm to 10-3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.
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