Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer
- Citation:
- dede Carvalho, C.Nunes, Nijs Ferreira Fortunato Martins J. M. M. I. "Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer." Materials Research Society Symposium - Proceedings. Vol. 426. 1996. 25-29.
Abstract:
The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.
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