Cork is a natural cellular and electrically insulating material which may have the capacity to store electric charges on or in its cell walls. Since natural cork has many voids, it is difficult to obtain uniform samples with the required dimensions. Therefore, a more uniform material, namely commercial cork agglomerate, usually used for floor and wall coverings, is employed in the present study. Since we know from our previous work that the electrical properties of cork are drastically affected by absorbed and adsorbed water, samples were protected by means of different polymer coatings (applied by spin-coating or soaking). Corona charging and isothermal charging and discharging currents were used to study the electrical trapping and detrapping capabilities of the samples. A comparison of the results leads to the conclusion that the most promising method for storing electric charges in this cellular material consists of drying and coating or soaking with a hydrophobic, electrically insulating polymer such as polytetraflouroethylene (Teflon (R)).

Cork is a natural cellular and electrically insulating material which may have the capacity to store electric charges on or in its cell walls. Since natural cork has many voids, it is difficult to obtain uniform samples with the required dimensions. Therefore, a more uniform material, namely commercial cork agglomerate, usually used for floor and wall coverings, is employed in the present study. Since we know from our previous work that the electrical properties of cork are drastically affected by absorbed and adsorbed water, samples were protected by means of different polymer coatings (applied by spin-coating or soaking). Corona charging and isothermal charging and discharging currents were used to study the electrical trapping and detrapping capabilities of the samples. A comparison of the results leads to the conclusion that the most promising method for storing electric charges in this cellular material consists of drying and coating or soaking with a hydrophobic, electrically insulating polymer such as polytetraflouroethylene (Teflon (R)). (c) 2007 Elsevier B.V. All rights reserved.

In this work we present a study on the effect of annealing temperatures on the structural, morphological, electrical and optical characteristics of gallium doped zinc oxide (GZO), indium zinc oxide (IZO) and indium-tin-oxide (ITO) films. GZO and IZO films were deposited at room temperature by r.f. magnetron sputtering, whereas the ITO films were commercial ones purchased from Balzers. All films were annealed at temperatures of 250 and 500 °C in open air for 1 h. The GZO and ITO films were polycrystalline. The amorphous structure of as-deposited IZO films becomes crystalline on high temperature annealing (500 °C). The sheet resistivity increased with increase in annealing temperature. GZO films showed an increase of 6 orders of magnitude. The optical transmittance and band gap of as-deposited films varied with annealing. The highest transmittance (over 95 %) and maximum band gap (3.93 eV) have been obtained for ITO films. © 2007 Elsevier B.V. All rights reserved.

Nitrogen-doped ZnO films were deposited by RF magnetron sputtering in 75% of N2 / (Ar + N2) gas atmosphere. The influence of substrate temperature ranging from room temperature (RT) to 300 °C was analyzed by X-ray diffractometry (XRD), spectrophotometry, X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS) and Hall measurements setup. The XRD studies confirmed the hexagonal ZnO structure and showed that the crystallinity of these films increased with increasing substrate temperature (Ts). The optical studies indicate the average visible transmittance in the wavelength ranging 500-800 nm increases with increasing Ts. A minimum transmittance (9.84%) obtained for the films deposited at RT increased with increasing Ts to a maximum of 88.59% at 300 °C (500-800 nm). Furthermore, it was understood that the band gap widens with increasing Ts from 1.99 eV (RT) to 3.30 eV (250 °C). Compositional analyses (XPS and SIMS) confirmed the nitrogen (N) incorporation into the ZnO films and its decreasing concentration with increasing Ts. The negative sign of Hall coefficients confirmed the n-type conducting. © 2007 Elsevier B.V. All rights reserved.

Nitrogen (N)-doped ZnO thin films were RF sputtered with different N2 volume (ranging from 10% to 100%) on sapphire (001) substrates. The influence of N2 vol.% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N2 vol.%. The films sputtered with 25 vol.% N2 showed better crystallinity. The transmittance was decreased with increasing N2 volume until 25% and was almost constant above 25%. A maximum optical band gap (2.08 eV) obtained for 10 vol.% N2 decreased with increasing N2 volume to reach a minimum of 1.53 eV at 100%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N2 volume to reach a maximum of ∼ 3.7 × 1021 atom/cm3 at 75% but then decreased slightly to 3.42 × 1021 atoms/cm3. The sign of Hall coefficient confirmed that the films sputtered with ≤ 25 vol.% N2 possess p-type conductivity which changes to n-type for > 25 vol.% N2. © 2007 Elsevier B.V. All rights reserved.

On 19 and 20 October 2006, the Research Centre on Enterprise and Work Organisation (IET) organised the first international conference on “Foresight Studies on Work in the Knowledge Society”. It took place at the auditorium of the new Library of FCT-UNL and had the support of the research project “CodeWork@VO” (financed by FCT-MCTES and co-ordinated by INESC, Porto). The conference related to the European research project “Work Organisation and Restructuring in the Knowledge Society” (WORKS), which is financed by the European Commission. The main objective of the conference was to analyse and discuss research findings on the trends of work structures in the knowledge society, and to debate on new work organisation models and new forms of work supported by ICT.

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The aim of this work is to study the electrical characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs) using spectroscopic impedance technique, where the poly-Si active layer was obtained by metal induced crystallization of amorphous silicon. From the study performed a theoretical model that fitted the impedance data is proposed, in order to obtain the separate contributions of each region that constitutes the TFT namely the channel, non accumulated region and contacts. © 2006 Elsevier B.V. All rights reserved.