In this paper we report results of nanocrystalline p-doped silicon films produced by hot wire chemical vapour deposition technique with Ta filaments, using a pre-mixed gas containing silane, diborane, methane, helium and hydrogen. The data obtained show that the films produced exhibit good optoelectronic properties and show a surface morphology dependent on the filament temperature and hydrogen dilution. The increase in the filament temperature, keeping constant the hydrogen dilution (87%), promotes the preferential growth of the crystals in the {220} direction, giving rise to a pyramidal-like surface structure. This behaviour is observed by the SEM micrographs as well as by the micro-Raman and X-ray diffraction analyses. On the other hand, using a constant filament temperature, the increase in the hydrogen dilution contributes to an increase in both {111} and {220} diffraction peaks. Thus, by combining both filament temperature and hydrogen dilution the film surface can be controlled from a smooth to a pyramidal-like structure, without decreasing the crystalline fraction of the films. The structure and morphology is also reflected in the stability of the electrical dark conductivity. We observe that this property depends on the temperature range of the measurements and on the exposition time of films to the atmospheric conditions. © 2002 Elsevier Science Ltd. All rights reserved.

In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 Å/s, ημτ product of 1.6 × 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 × 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 °C, hydrogen dilution of 99%, filament temperature of 1700 °C, and rf power of 100 W. © 2002 Elsevier Science B.V. All rights reserved.

Currently, microactuators are being developed using shape memory alloys (SMAs), which allow simple design geometries and provide large work outputs in restricted space. Several techniques have been used to produce NiTi shape memory alloy thin films, but from the practical point of view, only the sputter deposition method has succeeded so far. Vacuum evaporation of NiTi binary alloy entails the potential problem of the evaporation rates of each component not being the same due to differences in vapour pressure. Aiming to study the possible applications of SMAs to microfabrication, NiTi thin films were produced at CENIMAT by sputter and vacuum evaporation using raw materials from different sources. The films were analysed by differential scanning calorimetry (DSC) and X-ray diffraction (XRD) at room temperature, as well as in situ high temperature, in order to characterise the temperature ranges at which the different structural transformations occur. © 2002 Elsevier Science B.V. All rights reserved.

Hall effect measurements are one of the most powerful techniques for obtaining information about the conduction mechanism in polycrystalline semiconductor materials, which is the basis for understanding semiconductor gas sensors. In order to investigate the correlation between the microscopic characteristics and the macroscopic performances exhibited by undoped tin oxide gas sensors deposited by spray pyrolysis, Hall effect measurements were performed at different temperatures, from room temperature up to 500 K, and in the presence of two different atmospheres, air and methane. From these measurements, it was possible to infer the potential barrier and its dependence with the used atmosphere. The obtained results were analysed in terms of the oxygen mechanism at grain boundaries on the basis of the grain boundary-trapping model. In the presence of methane gas, the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height.

The surfaces of cordierite and glass particles were modified by coating them with an alumina precursor using a precipitation process in the presence of urea. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy, X-ray diffraction, electrophoresis, and rheological measurements were used to characterize the coated powders. SEM and transmission electron microscopy morphologies of the coated powders revealed that amorphous and homogeneous coatings have been formed around the particles. The morphology of the coated powders showed a coiled wormlike surface. The coating Al2O3 layer dominated the surface properties of the coated glass and cordierite powders. The influence of the coating layer on the processing ability of cordierite-based glass-ceramics substrates by tape casting was studied in aqueous media. It could be concluded that the coating of the powders facilitates the processing and yields green and sintered tapes with denser, more homogeneous microstructures compared with the uncoated powders.

The new compound [Co(eta(5)-C5H5)(dppf-P,P')I]I, 1, was synthesised by the stoichiometric reaction of the Co(III) complex [Co(eta(5)-C5H5)(CO)I-2], 2, with 1,1'-bis(diphenylphosphino)ferrocene (dppf) in CH2Cl2, and was characterised by multinuclear NMR spectroscopy. Exposure to air of THF or CH2Cl2 solutions of compound 1 gave, in an unexpected way, a polymeric chain comprising bridging 1,1'-bis(oxodiphenylphosphoranyl) ferrocene (dppfO(2)) joining tetrahedral Co(II) units [CoI2(mu-dppfO(2))](n), 3. Attempts to obtain the polymeric chain 3 by the direct reaction of dppfO(2) with CoI2, in CH2Cl2, gave instead the monomeric compound [CoI2(dppfO(2))], 4, in which dppfO2 is coordinated in a chelating mode. The structural characterisation of compounds 2, 3, and 4 was carried out by single crystal X-ray diffraction studies. The magnetic behaviour of [CoI2(dppfO(2))] and [CoI2(mu-dppfO(2))](n) was studied, and the results are consistent with tetrahedral S = 3/2 Co-II, possessing a (4)A(2) ground state, and S = 0 Fe-II. In these compounds, Co-II negative zero field splittings were determined from an analysis of the magnetic susceptibility temperature dependence, with D/k = -13 and -14 K for CoI2(dppfO(2)) and [CoI2(mu-dppfO(2))](n), respectively. DFT calculations were performed in order to understand the electronic structure of [Co(eta(5)-C5H5)(dppf-P,P')I]I, 1, as well as that of the paramagnetic specie [CoI2(dppfO(2))], 4. The [CoI2(mu-dppfO(2))](n) chain was also analysed and found to behave very similarly to the monomeric iodine derivative 4. The calculations showed the unpaired electrons to be localized on the Co(II) centre in all these species. The rather complicated electrochemical behaviour exhibited by the dppf complex [Co-III(eta(5)-C5H5)(dppf-P,P')I]I and by [Co(dppfO(2))I-2] is discussed.