Fortunato, E.a, Nunes Marques Costa Águas Ferreira Costa Martins P. a A. a. "
Thin film metal oxide semiconductors deposited on polymeric substrates."
Materials Research Society Symposium Proceedings. Vol. 685. 2001. 146-151.
AbstractHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10-2 Ωcm have been obtained, as deposited. © 2001 Materials Research Society.
Fortunato, E., Nunes Marques Costa Águas Ferreira Costa Martins P. A. D. "
Thin film metal oxide semiconductors deposited on polymeric substrates."
Materials Research Society Symposium - Proceedings. Vol. 666. 2001. F1131-F1136.
AbstractHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzke structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low 3.6×10-2 Ωcm have been obtained, as deposited.
Nunes, P., Fortunato Martins E. R. "
Thin film combustible gas sensors based on zinc oxide."
Materials Research Society Symposium - Proceedings. Vol. 666. 2001. F521-F526.
AbstractSensitivity tests to reductive gases such as methane, hydrogen and ethane were performed on zinc oxide (ZnO) thin films. The highest value of sensitivity was obtained for the film with a high electrical resistivity and a low thickness. The variation of the operating temperature of the film leads to a significant change in the sensitivity of the sensor with an ideal operating temperature dependence of the gas used. The sensitivity of the ZnO thin films changes linear with the increase of the gas concentration. However these films seem to be more appropriated for the detection of hydrogen following by methane and than for ethane since the value of sensitivity obtained are higher and its variation with the gas concentration more pronounced.
Martins, R., Fantoni Vieira A. M. "
Tailoring defects on amorphous silicon pin devices."
Journal of Non-Crystalline Solids. 164-166 (1993): 671-674.
AbstractThis paper deals with a new model and structure able to tailor defects in pin devices. The model assumes the usual density of states profile, including donor and acceptor like states inside the mobility gap and has the capability to simulate the transient and steady state device behavior. The new structure is based in two interfacial defectous layers, located at the junctions, acting as "gettering" centers to tailor the defects. The role of the interlayer and its thickness on device performances will be also discussed. © 1993.