Thin film position sensitive detectors based on pin amorphous silicon carbide structures
- Citation:
- Cabrita, A., Figueiredo Pereira Águas Silva Brida Ferreira Fortunato Martins J. L. H. "Thin film position sensitive detectors based on pin amorphous silicon carbide structures." Applied Surface Science. 184 (2001): 443-447.
Abstract:
The performances of silicon carbide position sensitive detectors in relation to position color selection applications were presented. The devices were deposited on glass substrates coated with a transparent conductive oxide layer based on indium tin oxide film (ITO). On top of the ITP layer a pin structure produced by plasma enhanced chemical vapor deposition technique was deposited. The set of data achieved indicated that the undoped silicon carbide layers presented a low density of states, which explained high dark conductivity values obtained and the type of performances recorded on the PSD devices produced.
Notes:
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