Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "
Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz."
Materials Science Forum. 455-456 (2004): 532-535.
AbstractThis paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.
Martins, R., Ferreira Fortunato I. E. "
Growth model of gas species produced by the hot-wire and hot-wire plasma-assisted techniques."
Key Engineering Materials. 230-232 (2002): 603-606.
AbstractThe model presented is based on the heat transfer and energy balance equations that rule the set of physical and chemical interactions that take place on the gas phase of a growth process, assuming that the deposition process occurs under laminar dynamic flow conditions (Knudsen number below 1). In these conditions, the chemistry and physics of the process involved in the growth mechanism of silicon thin films produced by the hot wire or the hot-wire plasma assisted technique can be proper derived by balance equations that supply information about how the plasma density, the gas dilution and the gas temperature influence the growth mechanism and the equilibrium of the concentration of species presented on the growth surface. The model developed establishes a relation between the abundance species formed and the parameters initiators of the process such as the filament temperature and the rf power density used.
Fortunato, E., Gonçalves Marques Assunção Ferreira Águas Pereira Martins A. A. V. "
Gallium zinc oxide coated polymeric substrates for optoelectronic applications."
Materials Research Society Symposium - Proceedings. Vol. 769. 2003. 291-296.
AbstractHighly transparent and conductive ZnO:Ga thin films were produced by rf magnetron sputtering at room temperature on polyethylene naphthalate substrates. The films present a good electrical and optical stability, surface uniformity and a very good adhesion to the polymeric substrates. The lowest resistivity obtained was 5×10-4 Ωcm with a sheet resistance of 15 Ω/sqr and an average optical transmittance in the visible part of the spectra of 80%. It was also shown that by passivating the polymeric surface with a thin SiO2 layer, the electrical and structural properties of the films are improved nearly by a factor of 2.