Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz

Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz

Citation:: Raniero, L.a, Martins Águas Zang Ferreira Pereira Fortunato Boufendi R. a H. a. "Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz." Materials Science Forum. 455-456 (2004): 532-535.

Abstract:

This paper aims to characterize the growth process of polymorphous/ nanocrystalline silicon (pm-Si:H) films produced by PECVD at 13.56 MHz. The emphasis is in determining the plasma parameters that allow to control the conditions where pm/nc-Si:H can be obtained under high hydrogen dilution, where the only varied parameter is the silane gas flow, fixing rf power, deposition pressure and substrate temperature. The data achieved show that good pm/nc-Si:H films are produced at 240 Pa using a silane gas flow of 5sccm (dilution 1:70) to which it corresponds films with photosensitivities exceeding 106, optical gaps close to 1.80 eV and 18 at% hydrogen contents. The data also show that under certain deposition conditions the pm-Si:H films peel-off.

Notes:

cited By 1

Rodrigo Martins

Professor @ Materials Science Department