Growth of ZnO:Ga thin films at room temperature on polymeric substrates: Thickness dependence

Citation:
Fortunato, E., Gonçalves Assunção Marques Águas Pereira Ferreira Martins A. V. A. "Growth of ZnO:Ga thin films at room temperature on polymeric substrates: Thickness dependence." Thin Solid Films. 442 (2003): 121-126.

Abstract:

In this paper, we present results concerning the thickness dependence (from 70 to 890 nm) of electrical, structural, morphological and optical properties presented by gallium-doped zinc oxide (GZO) deposited on polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. For thicknesses higher than 300 nm an independent correlation between the electrical, morphological, structural and optical properties are observed. The lowest resistivity obtained was 5 × 10-4 Ω cm with a sheet resistance of 15 Ω/□ and an average optical transmittance in the visible part of the spectra of 80%. It is also shown that by passivating the surface of the polymer by depositing a thin silicon dioxide layer the electrical and structural properties of the films are improved nearly by a factor of two. © 2003 Elsevier B.V. All rights reserved.

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